公开(公告)号：US20190294748A1

公开(公告)日：2019-09-26

申请号：US16280205

申请日：2019-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGWOOK JEON ,  YEOIL YUN ,  SANGWOO PAE ,  UIHUI KWON ,  KEUNHO LEE

IPC: G06F17/50

Abstract: A method of designing a semiconductor circuit using a circuit simulation tool executed by a computer includes calculating power consumptions of elements of the semiconductor circuit by use of the circuit simulation tool. A thermal netlist is created about the semiconductor circuit, based on the power consumptions and geometry information of each of the elements. A simulation of the semiconductor circuit is performed with the thermal netlist using the circuit simulation tool to detect a temperature of each of the elements. The thermal netlist includes thermal capacitance information of each of the elements.

公开(公告)号：US20230282662A1

公开(公告)日：2023-09-07

申请号：US18088362

申请日：2022-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： KWANGHEE LEE ,  JAE HO KIM ,  UIHUI KWON ,  EUIYOUNG SONG

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685

Abstract: An image sensor comprising a substrate having first and second surfaces opposite to each other, a pixel isolation section that penetrates the substrate and separates a plurality of pixels constituting first, second, and third pixel groups, each of the first, second, and third pixel groups including pixels that are arranged in n columns and m rows, a light-shield grid on the first surface and overlapping the pixel isolation section, and a light modulator on the first surface and overlapping the pixel isolation section on a center of each of the first, second, and third pixel groups. The light-shield grid has a first width in a first direction. The light modulator has a second width greater than the first width in the first direction.

公开(公告)号：US20210336026A1

公开(公告)日：2021-10-28

申请号：US17206832

申请日：2021-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGJUN YUN ,  UIHUI KWON ,  SEONGNAM KIM ,  HYOSHIN AHN

IPC: H01L29/49 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

公开(公告)号：US20230068212A1

公开(公告)日：2023-03-02

申请号：US18053777

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGJUN YUN ,  UIHUI KWON ,  SEONGNAM KIM ,  HYOSHIN AHN

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

公开(公告)号：US20190130059A1

公开(公告)日：2019-05-02

申请号：US16233422

申请日：2018-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGWOOK JEON ,  YEOIL YUN ,  SANGWOO PAE ,  UIHUI KWON ,  KEUNHO LEE

IPC: G06F17/50

Abstract: A method of designing a semiconductor circuit using a circuit simulation tool executed by a computer includes calculating power consumptions of elements of the semiconductor circuit by use of the circuit simulation tool. A thermal netlist is created about the semiconductor circuit, based on the power consumptions and geometry information of each of the elements. A simulation of the semiconductor circuit is performed with the thermal netlist using the circuit simulation tool to detect a temperature of each of the elements. The thermal netlist includes thermal capacitance information of each of the elements.