公开(公告)号：US20210336026A1

公开(公告)日：2021-10-28

申请号：US17206832

申请日：2021-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGJUN YUN ,  UIHUI KWON ,  SEONGNAM KIM ,  HYOSHIN AHN

IPC: H01L29/49 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

公开(公告)号：US20230068212A1

公开(公告)日：2023-03-02

申请号：US18053777

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGJUN YUN ,  UIHUI KWON ,  SEONGNAM KIM ,  HYOSHIN AHN

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.