公开(公告)号：US20230238316A1

公开(公告)日：2023-07-27

申请号：US18189834

申请日：2023-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Il CHOI ,  Jumyong PARK ,  Jin Ho AN ,  Chungsun LEE ,  Teahwa JEONG ,  Jeonggi JIN

IPC: H01L23/498 ,  H01L25/10 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L23/49838 ,  H01L25/105 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49822 ,  H01L25/0652

Abstract: A method for manufacturing a semiconductor package may include: forming a photoimageable dielectric layer on a substrate including a pad; forming a preliminary via hole in the photoimageable dielectric layer to expose the pad; forming a hard mask layer on the photoimageable dielectric layer and the pad; etching the photoimageable dielectric layer and the hard mask layer to form a via hole, a first hole, and a trench; forming a metal layer on the photoimageable dielectric layer connected to the pad; planarizing the metal layer to form a wiring pattern; and placing a semiconductor chip electrically connected to the wiring pattern. The first hole may be disposed on the via hole and connected thereto, and a diameter of the first hole may be larger than a diameter of the via hole.

公开(公告)号：US20200058609A1

公开(公告)日：2020-02-20

申请号：US16364775

申请日：2019-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggi JIN ,  Ju-ll CHOI ,  Teahwa JEONG ,  Atsushi FUJISAKI

IPC: H01L23/00 ,  H01L21/768

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line.