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    MEMORY SYSTEM CAPABLE OF RE-MAPPING ADDRESS
    1.
    发明申请
    MEMORY SYSTEM CAPABLE OF RE-MAPPING ADDRESS 审中-公开
    可重新映射地址的记忆系统

    公开(公告)号：US20150199230A1

    公开(公告)日：2015-07-16

    申请号：US14524476

    申请日：2014-10-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： MI-KYOUNG PARK ,  Dong-Yang Lee ,  Sun-Young Lim ,  Bu-Il Jung ,  Ju-Yun Jung ,  Sung-Ho Cho ,  Hee-Joo Choi ,  Min-Yeab Choo ,  Hyuk Han

    IPC: G06F11/10

    CPC classification number: G11C29/76 ,  G11C8/06 ,  G11C2029/4402

    Abstract: A memory system includes a memory controller, a memory cell array, a location information storage unit, an address mapping table, an address conversion unit, and a mapping information calculation unit. The memory controller generates a logical address signal and an address re-mapping command. The memory cell array includes a plurality of logic blocks. The location information storage unit stores location information corresponding to faulty memory cells included in the memory cell array. The address mapping table stores address mapping information. The address conversion unit converts the logical address signal to a physical address signal corresponding to the memory cell array based on the address mapping information. The mapping information calculation unit generates the address mapping information to reduce the number of logic blocks including the faulty memory cells based on the location information upon the mapping information calculation unit receiving the address re-mapping command.

    Abstract translation: 存储器系统包括存储器控制器，存储单元阵列，位置信息存储单元，地址映射表，地址转换单元和映射信息计算单元。 存储器控制器产生逻辑地址信号和地址重映射命令。 存储单元阵列包括多个逻辑块。 位置信息存储单元存储与包含在存储单元阵列中的故障存储单元对应的位置信息。 地址映射表存储地址映射信息。 地址转换单元基于地址映射信息将逻辑地址信号转换为对应于存储单元阵列的物理地址信号。 映射信息计算单元根据映射信息计算单元接收地址重映射命令，根据位置信息生成地址映射信息，以减少包括故障存储单元的逻辑块的数量。

    Electronic device case and surface treatment method thereof
    3.
    发明授权
    Electronic device case and surface treatment method thereof 有权
    电子设备外壳及其表面处理方法

    公开(公告)号：US09206522B2

    公开(公告)日：2015-12-08

    申请号：US13650735

    申请日：2012-10-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-Ho Cho ,  Woon-Sik Lee

    IPC: H05K5/04 ,  B21C23/24 ,  C25D11/16 ,  C25D11/24

    CPC classification number: C25D11/16 ,  C25D11/246

    Abstract: An electronic device case and a surface treatment method thereof are provided in which an exterior case is diecast of an aluminum alloy, an aluminum alloy layer is deposited on an outer surface of the exterior case, an oxidized coating layer is formed on a surface of the aluminum alloy layer, and a sealing layer is formed atop the oxidized coating layer and may seal pores therein. A pigment colored layer may be formed between the oxidized coating layer and the sealing layer.

    Abstract translation: 提供一种电子设备外壳及其表面处理方法，其中外壳为铝合金压铸件，铝合金层沉积在外壳的外表面上，氧化涂层形成在 铝合金层，并且密封层形成在氧化涂层的顶部，并且可以密封其中的孔。 可以在氧化的涂层和密封层之间形成颜料着色层。

    Memory system capable of re-mapping address
    4.
    发明授权
    Memory system capable of re-mapping address 有权

    公开(公告)号：US10083764B2

    公开(公告)日：2018-09-25

    申请号：US14524476

    申请日：2014-10-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Mi-Kyoung Park ,  Dong-Yang Lee ,  Sun-Young Lim ,  Bu-Il Jung ,  Ju-Yun Jung ,  Sung-Ho Cho ,  Hee-Joo Choi ,  Min-Yeab Choo ,  Hyuk Han

    IPC: G11C29/00 ,  G11C8/06 ,  G11C29/44

    CPC classification number: G11C29/76 ,  G11C8/06 ,  G11C2029/4402

    Abstract: A memory system includes a memory controller, a memory cell array, a location information storage unit, an address mapping table, an address conversion unit, and a mapping information calculation unit. The memory controller generates a logical address signal and an address re-mapping command. The memory cell array includes a plurality of logic blocks. The location information storage unit stores location information corresponding to faulty memory cells included in the memory cell array. The address mapping table stores address mapping information. The address conversion unit converts the logical address signal to a physical address signal corresponding to the memory cell array based on the address mapping information. The mapping information calculation unit generates the address mapping information to reduce the number of logic blocks including the faulty memory cells based on the location information upon the mapping information calculation unit receiving the address re-mapping command.

    COVER HAVING METALLIC GRID STRUCTURE AND METHOD FOR MANUFACTURING THE COVER
    5.
    发明申请
    COVER HAVING METALLIC GRID STRUCTURE AND METHOD FOR MANUFACTURING THE COVER 有权
    具有金属网格结构的覆盖物及其制造方法

    公开(公告)号：US20130323579A1

    公开(公告)日：2013-12-05

    申请号：US13907615

    申请日：2013-05-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Wook Hwang ,  Sung-Ho Cho ,  Hee-Cheul Moon ,  Seung-Chang Baek ,  Chan-Seob Park

    IPC: H01M2/04

    Abstract: Provided are a cover having a metallic grid structure and a method for manufacturing the cover. The cover includes a pattern portion formed of a metallic material, in which a plurality of patterns are independently disposed spaced apart from each other and an injection portion disposed between pattern portions to connect the pattern portions, the injection portion being formed of a non-metallic material. The method includes forming a pre-pattern portion including patterns in a regular or irregular form and a bridge connecting the patterns on a metallic plate, forming the injection portion on the pre-pattern portion by insert-injection or thermo-compression press, and removing the bridge.

    Abstract translation: 提供具有金属网格结构的盖和用于制造盖的方法。 盖包括由金属材料形成的图案部分，其中多个图案彼此独立地设置，并且设置在图案部分之间的注射部分以连接图案部分，注射部分由非金属材料形成 材料。 该方法包括形成包含规则或不规则形式的图案的预图案部分和连接金属板上的图案的桥，通过插入注射或热压机在预图案部分上形成注射部分，以及去除 桥。

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