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    High electron mobility transistor including plurality of gate electrodes
    2.
    发明授权
    High electron mobility transistor including plurality of gate electrodes 有权
    高电子迁移率晶体管包括多个栅电极

    公开(公告)号：US09147738B2

    公开(公告)日：2015-09-29

    申请号：US14018833

    申请日：2013-09-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul Jeon ,  Young-hwan Park ,  Ki-yeol Park ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Sun-kyu Hwang

    IPC: H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

    CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/7787

    Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

    Abstract translation: 根据示例性实施例，高电子迁移率晶体管包括：包括第一半导体材料的沟道层; 沟道供应层，其被配置为在所述沟道层中产生二维电子气（2DEG），所述沟道供给层包括第二半导体材料; 源极和漏极彼此间隔开，并且沟道供应层的上表面限定栅电极接收部分; 第一栅电极; 以及与第一栅电极和栅电极接收部分间隔开的至少一个第二栅电极。 第一栅电极可以在栅极电极接收部分中，并且在源电极和漏电极之间。 所述至少一个第二栅电极可以在所述源电极和所述第一栅电极之间。

    Normally-off high electron mobility transistor
    4.
    发明授权
    Normally-off high electron mobility transistor 有权
    常关高电子迁移率晶体管

    公开(公告)号：US08890212B2

    公开(公告)日：2014-11-18

    申请号：US13874920

    申请日：2013-05-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul Jeon ,  Young-hwan Park ,  Jae-joon Oh ,  Kyoung-yeon Kim ,  Joon-yong Kim ,  Ki-yeol Park ,  Jai-kwang Shin ,  Sun-kyu Hwang

    IPC: H01L29/66 ,  H01L29/15 ,  H01L33/00 ,  H01L29/12 ,  H01L29/20 ,  H01L29/778 ,  H01L29/10 ,  H01L29/423 ,  H01L29/40

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

    Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

    Abstract translation: 根据示例性实施例，常关高电子迁移率晶体管（HEMT）包括：具有第一氮化物半导体的沟道层，沟道层上的沟道供应层，沟道供应层侧面的源电极和漏电极 沟道供应层上的耗尽形成层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 沟道供给层包括第二氮化物半导体，并且被配置为在沟道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为具有至少两个厚度，并且被配置为在2DEG的至少部分区域中形成耗尽区。 栅电极与耗尽形成层接触。

    High-electron mobility transistor and method of manufacturing the same
    5.
    发明授权
    High-electron mobility transistor and method of manufacturing the same 有权
    高电子迁移率晶体管及其制造方法

    公开(公告)号：US09117890B2

    公开(公告)日：2015-08-25

    申请号：US13910417

    申请日：2013-06-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-seob Kim ,  Kyoung-yeon Kim ,  Joon-yong Kim ,  Jai-kwang Shin ,  Jae-joon Oh ,  Hyuk-soon Choi ,  Jong-bong Ha ,  Sun-kyu Hwang ,  In-jun Hwang

    IPC: H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/417 ,  H01L29/20

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

    Abstract translation: 根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极 的栅电极。 通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。 耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

    High electron mobility transistor and method of manufacturing the same
    6.
    发明授权
    High electron mobility transistor and method of manufacturing the same 有权
    高电子迁移率晶体管及其制造方法

    公开(公告)号：US09252255B2

    公开(公告)日：2016-02-02

    申请号：US14085121

    申请日：2013-11-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-seob Kim ,  In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Woo-chul Jeon ,  Hyuk-soon Choi ,  Sun-kyu Hwang

    IPC: H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20

    CPC classification number: H01L29/7787 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66462

    Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

    Abstract translation: 提供高电子迁移率晶体管（HEMT）和制造HEMT的方法。 HEMT包括：包含第一半导体材料的沟道层; 沟道供应层，包括第二半导体材料并在沟道层中产生二维电子气（2DEG）; 在所述沟道供给层中彼此分离的源电极和漏电极; 至少一个耗尽形成单元，其形成在所述沟道供应层上并在所述2DEG中形成耗尽区; 至少一个栅电极，形成在所述至少一个耗尽形成单元上; 连接所述至少一个耗尽形成单元和所述源电极的至少一个桥; 以及从所述源电极下方的所述至少一个桥延伸的接触部。

    High electron mobility transistor and method of manufacturing the same
    8.
    发明授权
    High electron mobility transistor and method of manufacturing the same 有权
    高电子迁移率晶体管及其制造方法

    公开(公告)号：US08860089B2

    公开(公告)日：2014-10-14

    申请号：US13754047

    申请日：2013-01-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-yeol Park ,  Woo-chul Jeon ,  Young-hwan Park ,  Jai-kwang Shin ,  Jong-bong Ha ,  Sun-kyu Hwang

    IPC: H01L29/778 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/20

    CPC classification number: H01L29/778 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

    Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

    Abstract translation: 根据示例实施例，较高电子迁移率晶体管（HEMT）可以包括第一沟道层，第一沟道层上的第二沟道层，第二沟道层上的沟道电源，与第一沟道层间隔开的漏极， 与第一沟道层接触并与第二沟道层和沟道供给层中的至少一个接触的源电极以及源电极和漏电极之间的栅电极单元。 栅电极单元可以具有常关结构。 第一和第二沟道层彼此形成PN结。 漏电极接触第二沟道层和沟道供应层中的至少一个。

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