公开(公告)号：US20140346437A1

公开(公告)日：2014-11-27

申请号：US14255854

申请日：2014-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Deok SIM ,  Sang Jo KIM ,  Sung Tae KIM ,  Young Sun KIM ,  Seong Ju PARK ,  Suk Ho YOON ,  Sang Jun LEE

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/32 ,  H01L33/382

Abstract: A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0≦x

Abstract translation: 提供了一种半导体发光器件，其包括第一导电型半导体层，包括由In x Ga（1-x）N制成的至少一个量子势垒层的有源层，其中0＆lt; 1E; x

公开(公告)号：US20140231863A1

公开(公告)日：2014-08-21

申请号：US14184171

申请日：2014-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kee Won LEE ,  Jong Uk SEO ,  Suk Ho YOON ,  Keon Hun LEE ,  Sang Don LEE

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

Abstract translation: 提供一种制造氮化物半导体发光器件的方法。 该方法包括在衬底上生长第一III族氮化物半导体层，第一III族氮化物半导体层具有形成为具有III族极性的III族富集表面的顶表面和底表面 形成为呈现N极性的富N的表面。 该方法还包括选择性地蚀刻第一III族氮化物半导体层的顶表面中的N极区域，在第一III族氮化物半导体层上形成第二III族氮化物半导体层以填充蚀刻的N极区域并形成 包括第一和第二导电型氮化物半导体层的发光结构和在第二III族氮化物半导体层上的有源层。

公开(公告)号：US20130255578A1

公开(公告)日：2013-10-03

申请号：US13798772

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tan SAKONG ,  Do Young RHEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM ,  Sung Tae KIM

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C16/4584 ,  C23C16/46

Abstract: A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate.

Abstract translation: 可以提供包括室，腔室中的基座和加热室的化学气相沉积（CVD）设备。 基座包括转子，联接到转子的下部的旋转轴，耦合到旋转轴的驱动装置和限定在转子的上表面的至少一个凹部。 驱动装置可旋转地驱动旋转轴。 所述至少一个口袋包括被配置为在其上容纳衬底的安装部分和从所述至少一个口袋的底表面突出的突出部分，例如凸起部分，使得所述突出部分位于对应于 旋转轴。 加热单元围绕旋转轴并加热基板。

公开(公告)号：US20130098293A1

公开(公告)日：2013-04-25

申请号：US13655696

申请日：2012-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun LEE ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/4583 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262

Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟，所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道，用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管，其中，所述供给管中的每一个连接到两个以上对应的气体管，并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

公开(公告)号：US20170077346A1

公开(公告)日：2017-03-16

申请号：US15341259

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

公开(公告)号：US20160111596A1

公开(公告)日：2016-04-21

申请号：US14979869

申请日：2015-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Min KIM ,  Tan SAKONG ,  Suk Ho YOON ,  Keon Hun LEE ,  Do Young RHEE ,  Sang Don LEE

IPC: H01L33/14 ,  H05B33/08 ,  H01L25/16 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L25/167 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0872 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Abstract translation: 照明系统包括：照明单元，包括至少一个照明装置，被配置为测量大气温度和湿度中的至少一个的感测单元;被配置为比较由传感器单元测量的温度和湿度中的至少一个的控制单元 具有设定值，并且作为比较的结果确定照明单元的色温，以及被配置为驱动到照明单元以具有确定的色温的驱动单元。

公开(公告)号：US20130099248A1

公开(公告)日：2013-04-25

申请号：US13655250

申请日：2012-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Sung Tae KIM ,  Young Sun KIM ,  Suk Ho YOON ,  Ki Sung KIM ,  Ho Chul LEE

IPC: H01L33/32

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer.

Abstract translation: 提供了包括n型氮化物半导体层，设置在n型氮化物半导体层上的有源层和设置在有源层上的p型氮化物半导体层的氮化物半导体发光器件。 一个或多个电流扩散层设置在n型氮化物半导体层的表面上。 电流扩散层包括具有比形成n型氮化物半导体层的材料更大的带隙能量的材料，以便在与形成n型氮化物半导体层的材料的界面处形成二维电子气层 氮化物半导体层。

公开(公告)号：US20150207034A1

公开(公告)日：2015-07-23

申请号：US14577826

申请日：2014-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung Kyun KIM ,  Tong Ik SHIN ,  Jin Young LIM ,  Young Sun KIM ,  Suk Ho YOON

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/22 ,  H01L33/10

Abstract: A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency.

Abstract translation: 半导体发光器件可以包括形成在衬底上并在其中具有缺陷区域的基底半导体层; 设置在与所述基底半导体层上的所述缺陷区域对应的区域中的空腔; 封盖层，其设置成覆盖所述基底半导体层和所述空腔的至少一个区域; 以及发光结构，其设置在所述覆盖层上并且包括第一导电型半导体层，有源层和第二导电型半导体层。 可以减少在发光结构中形成的晶格缺陷，以提高发光效率。

公开(公告)号：US20140370634A1

公开(公告)日：2014-12-18

申请号：US14250070

申请日：2014-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keon Hun LEE ,  Min Ho KIM ,  Jong Uk SEO ,  Suk Ho YOON ,  Kee Won LEE ,  Sang Don LEE ,  Ho Chul LEE

IPC: H01L21/02 ,  H01L31/18

CPC classification number: H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02576 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/22

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract translation: 制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。

公开(公告)号：US20150240358A1

公开(公告)日：2015-08-27

申请号：US14506182

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Sung KIM ,  Jong Won JANG ,  Sung Min CHOI ,  Sang Heon HAN ,  Suk Ho YOON ,  Jeong Wook LEE

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/45508 ,  C23C16/4584

Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.

Abstract translation: 提供了一个感受器。 感受体包括：主体，其具有第一表面，与第一表面相对的第二表面和连接第一表面和第二表面的外侧表面; 分别从所述第一表面凹入以容纳至少一个晶片的至少一个凹坑; 至少一个隧道分别位于所述口袋下方并从所述主体的中心延伸到所述外侧表面; 至少一个连接通道，每个连接通道将每个口袋连接到每个隧道; 以及在主体的中心连接到隧道的供应管线，并且从外部供应气体以使气体从主体的中心流向外侧表面。