SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20230378155A1

    公开(公告)日:2023-11-23

    申请号:US18156494

    申请日:2023-01-19

    CPC classification number: H01L27/0207 G06F30/392 G06F30/394

    Abstract: A semiconductor device includes first standard cells arranged in a first row on a substrate and respectively including a first base active region, second standard cells arranged in a second row adjacent to the first row and respectively including a second base active region, a power line extending in a first direction along a boundary between the first and second standard cells, and a device isolation layer on side surfaces of the first and second base active regions, wherein, in a plan view, the first standard cells and the second standard cells have a same cell height, the first base active region of each of the first standard cells includes a first active line having a first conductivity-type and a second active line having a second conductivity-type, the second base active region of each of the second standard cells includes a third active line having the first conductivity-type and a fourth active line having the second conductivity-type, the first active lines of the first standard cells arranged in the first row have a same first width, the third active lines of the second standard cells arranged in the second row have a same second width, and the first width is narrower than the second width.

    SEMICONDUCTOR DEVICE
    2.
    发明公开

    公开(公告)号:US20230361036A1

    公开(公告)日:2023-11-09

    申请号:US18140356

    申请日:2023-04-27

    CPC classification number: H01L23/5286 H01L23/481

    Abstract: A semiconductor device includes a substrate including a first side and a second side opposite to the first side, a first power rail and a second power rail provided on the first side of the substrate, the first power rail and the second power rail extending in a first direction and being separated in a second direction, a first active region and a second active region provided on the first side of the substrate, the first active region and the second active region being defined by an element separation film between the first power rail and the second power rail and being separated in the second direction, a power delivery network provided on the second side of the substrate, and a first power through via penetrating the element separation film and the substrate, the first power through via connecting the power delivery network and the first power rail.

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