公开(公告)号：US12027401B2

公开(公告)日：2024-07-02

申请号：US17203036

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwanghee Jo ,  Dongjoo Moon ,  Siwoong Woo ,  Sunjung Kim ,  Donggil Shim ,  Huijae Kim ,  Seungdae Seok

IPC: H01L21/68 ,  G03F7/00 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/68 ,  G03F7/70775 ,  H01L21/67742 ,  H01L21/683 ,  H01L2224/75701 ,  H01L2224/75703

Abstract: A semiconductor substrate alignment device includes: a lower chuck; a lower chuck driving unit; an upper chuck above and overlapping the lower chuck; observation windows in the upper chuck, imaging units respectively configured to irradiate light through the observation windows and to obtain images by detecting light reflected from the semiconductor substrates; a distance sensor configured to detect a distance between an edge of the lower chuck and an edge of the upper chuck; and a control unit configured to identify first and second alignment keys from images of first and second semiconductor substrates, determine an alignment error value of the first and second semiconductor substrates, and compensate for the alignment error value by driving the lower chuck driving unit.

公开(公告)号：US20230215698A1

公开(公告)日：2023-07-06

申请号：US17865675

申请日：2022-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhwa Baek ,  Donggap Shin ,  Yongin Lee ,  Se-Hoon Jang ,  Youngho Kim ,  Ho Kim ,  Seungdae Seok ,  Siwoong Woo

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/32862 ,  H01L21/67201 ,  H01J37/32532 ,  H01L21/67051 ,  H01L21/6833

Abstract: Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H2O supply that supplies the process space with H2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.

公开(公告)号：US20210143030A1

公开(公告)日：2021-05-13

申请号：US16911919

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeongbin Lim ,  Junhyung Kim ,  Siwoong Woo ,  Seungdae Seok

IPC: H01L21/67 ,  H01L21/683 ,  H01L33/00 ,  H01L21/68 ,  H01L33/48

Abstract: A wafer bonding apparatus includes a lower stage having a first surface and holding a first wafer on the first surface, an upper stage having a second surface and holding a second wafer on the second surface, an upper push rod passing through a center hole of the upper stage to press a middle region of the second wafer, and a plurality of first heating circuits provided at the second surface of the upper stage to heat the second wafer held by the upper stage. Each of the plurality of first heating circuits is independently controlled such that the second wafer is heated to have different temperature distributions along a circumferential direction about a center of the second wafer.