公开(公告)号：US20230215698A1

公开(公告)日：2023-07-06

申请号：US17865675

申请日：2022-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhwa Baek ,  Donggap Shin ,  Yongin Lee ,  Se-Hoon Jang ,  Youngho Kim ,  Ho Kim ,  Seungdae Seok ,  Siwoong Woo

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/32862 ,  H01L21/67201 ,  H01J37/32532 ,  H01L21/67051 ,  H01L21/6833

Abstract: Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H2O supply that supplies the process space with H2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.