USER DEVICE INCLUDING A NONVOLATILE MEMORY DEVICE AND A DATA WRITE METHOD THEREOF

    公开(公告)号:US20180341582A1

    公开(公告)日:2018-11-29

    申请号:US16056781

    申请日:2018-08-07

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

    User device including a nonvolatile memory device and a data write method thereof

    公开(公告)号:US10042754B2

    公开(公告)日:2018-08-07

    申请号:US14302696

    申请日:2014-06-12

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

    USER DEVICE INCLUDING A NONVOLATILE MEMORY DEVICE AND A DATA WRITE METHOD THEREOF
    5.
    发明申请
    USER DEVICE INCLUDING A NONVOLATILE MEMORY DEVICE AND A DATA WRITE METHOD THEREOF 审中-公开
    包括非易失性存储器件的用户设备及其数据写入方法

    公开(公告)号:US20140372678A1

    公开(公告)日:2014-12-18

    申请号:US14302696

    申请日:2014-06-12

    CPC classification number: G06F12/0246 G06F2212/7207 Y02D10/13

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

    Abstract translation: 包括在用户装置中的非易失性存储装置的访问方法包括:接收写入请求以将数据写入非易失性存储装置; 检测发出写请求的应用,用户上下文,写缓冲器的队列大小,写请求数据的属性或用户设备的操作模式; 以及根据检测到的信息,确定用于将写入请求的数据写入非易失性存储器件的多个写入模式之一。 写入模式具有不同的编程电压并验证电压组。

    User device including a nonvolatile memory device and a data write method thereof

    公开(公告)号:US11093384B2

    公开(公告)日:2021-08-17

    申请号:US16877802

    申请日:2020-05-19

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

    User device including a nonvolatile memory device and a data write method thereof

    公开(公告)号:US10657042B2

    公开(公告)日:2020-05-19

    申请号:US16056781

    申请日:2018-08-07

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

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