公开(公告)号：US20240196633A1

公开(公告)日：2024-06-13

申请号：US18529365

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseok Yang ,  Seula Ryu ,  Jaewoo Shin ,  Minhwan An ,  Seongjin Lee ,  Sunghak Lee ,  Eungchang Lee ,  Yunkyeong Jeong ,  Jinsuk Chung

IPC: H10B80/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: H10B80/00 ,  H01L25/0652 ,  H01L25/18 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586

Abstract: A memory device and a system includes a plurality of physical interfaces. The memory device includes a buffer die including a first interface circuit and a second interface circuit configured to communicate with an external device and a memory die stack mounted on the buffer die and including a plurality of stacked memory dies. The plurality of memory dies are electrically connected to the first interface circuit and the second interface circuit, the first interface circuit is configured to activate responsive to a first selection signal, and the second interface circuit is configured to activate responsive to a second selection signal. The first selection signal and the second selection signal are received from a memory controller external to the memory device.

公开(公告)号：US11508429B2

公开(公告)日：2022-11-22

申请号：US17399402

申请日：2021-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonkyu Choi ,  Dokyun Kim ,  Seongjin Lee ,  Doohee Hwang

IPC: G11C11/406 ,  G11C7/10

Abstract: A memory system includes a memory controller and a memory device. The memory controller generates refresh commands periodically by an average refresh interval. The memory device performs a normal refresh operation and a hammer refresh operation during a refresh cycle time. The memory device includes a memory cell array including memory cells connected to a plurality of wordlines, a temperature sensor configured to provide temperature information by measuring an operation temperature of the memory cell array and a refresh controller configured to control the normal refresh operation and the hammer refresh operation. The refresh controller varies a hammer ratio of a unit hammer execution number of the hammer refresh operation executed during the refresh cycle time with respect to a unit normal execution number of the normal refresh operation executed during the refresh cycle time.