Three-dimensional semiconductor memory devices

    公开(公告)号:US11621276B2

    公开(公告)日:2023-04-04

    申请号:US17035970

    申请日:2020-09-29

    Abstract: A semiconductor device includes a substrate including a lower horizontal layer and an upper horizontal layer and having a cell array region and a connection region, an electrode structure including electrodes, which are stacked above the substrate, and which extend from the cell array region to the connection region, a vertical channel structure on the cell array region that penetrates the electrode structure and is connected to the substrate, and a separation structure on the connection region that penetrates the electrode structure. The lower horizontal layer has a first top surface in contact with a first portion of the separation structure, and a second top surface in contact with a second portion of the separation structure, and an inflection point at which a height of the lower horizontal layer is abruptly changed between the first top surface and the second top surface.

    Texture processing method and unit

    公开(公告)号:US10176600B2

    公开(公告)日:2019-01-08

    申请号:US15609828

    申请日:2017-05-31

    Inventor: Seong-hun Jeong

    Abstract: A texture processing unit includes a controller configured to determine a first calculator that performs a calculation on a first mipmap and a second calculator that performs a calculation on a second mipmap, based on a level of detail (LOD) weight indicating influences of the first mipmap and the second mipmap on texture filtering, the influences being based on an LOD value of graphics; and a texture filter configured to perform the texture filtering by using the first calculator and the second calculator, wherein a calculation precision of the first calculator is different from a calculation precision of the second calculator.

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