公开(公告)号：US20220262739A1

公开(公告)日：2022-08-18

申请号：US17476985

申请日：2021-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon Bae KIM ,  Seo Woo NAM

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L21/3213

Abstract: A semiconductor device includes a substrate, a first interlayer insulating layer disposed on the substrate, a first trench formed inside the first interlayer insulating layer, a contact plug disposed inside the first trench, a first wiring pattern disposed on the contact plug, a second wiring pattern which is disposed on the first interlayer insulating layer and spaced apart from the first wiring pattern in a horizontal direction, a second interlayer insulating layer which is disposed on the first interlayer insulating layer and surrounds each of side walls of the first wiring pattern and each of side walls of the second wiring pattern, and a first air gap formed on the contact plug inside the first trench.

公开(公告)号：US20240021520A1

公开(公告)日：2024-01-18

申请号：US18373392

申请日：2023-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon Bae KIM ,  Seo Woo NAM

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53295 ,  H01L23/5226 ,  H01L21/3213 ,  H01L21/76877 ,  H01L23/5283

Abstract: A semiconductor device includes a substrate, a first interlayer insulating layer disposed on the substrate, a first trench formed inside the first interlayer insulating layer, a contact plug disposed inside the first trench, a first wiring pattern disposed on the contact plug, a second wiring pattern which is disposed on the first interlayer insulating layer and spaced apart from the first wiring pattern in a horizontal direction, a second interlayer insulating layer which is disposed on the first interlayer insulating layer and surrounds each of side walls of the first wiring pattern and each of side walls of the second wiring pattern, and a first air gap formed on the contact plug inside the first trench.

公开(公告)号：US20230178477A1

公开(公告)日：2023-06-08

申请号：US17866917

申请日：2022-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Anthony Dongick LEE ,  Sang Cheol NA ,  Seo Woo NAM ,  Ki Chul PARK

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5283 ,  H01L23/53238

Abstract: A semiconductor device is provided. The semiconductor device comprises a first wiring structure which includes a first material, and has a first width on a lowest surface in a first direction and a second wiring structure which includes a second material, is spaced apart from the first wiring structure in the first direction, and has a second width smaller than the first width on a lowest surface in the first direction, wherein a highest surface of the first wiring structure has a third width smaller than the first width in the first direction, and a highest surface of the second wiring structure has a fourth width smaller than the second width in the first direction.