-
公开(公告)号:US11715811B2
公开(公告)日:2023-08-01
申请号:US17133171
申请日:2020-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doyoung Kwag , Byungchul Kim , Sangmoo Park , Minsub Oh , Wonsik Choi
IPC: H01L33/00 , H01L25/075
CPC classification number: H01L33/005 , H01L25/075 , H01L25/0753
Abstract: A light emitting diode (LED) transfer system includes an alignment apparatus configured to align a plurality of target substrates; a handling robot configured to transport the plurality of target substrates; a transfer stage configured to hold the plurality of target substrates and move the plurality of target substrates; a substrate stage configured to move a relay substrate having a plurality of LEDs with respect to the transfer stage while the plurality of LEDs are facing the transfer stage; a laser configured to emit a laser beam toward the plurality of LEDs of the relay substrate so that the plurality of LEDs are transferred from the relay substrate to the plurality of target substrates; and a processor configured to control the alignment apparatus, the handling robot, the transfer stage, the substrate stage, and the laser to transfer the plurality of LEDs of the relay substrate to the plurality of target substrates.
-
公开(公告)号:US11715729B2
公开(公告)日:2023-08-01
申请号:US17244471
申请日:2021-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yoonsuk Lee , Eunhye Kim , Sangmoo Park , Dongyeob Lee
CPC classification number: H01L25/167 , H01L24/26 , H01L24/32 , H01L24/83 , H01L24/05 , H01L24/29 , H01L33/40 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/08501 , H01L2224/26145 , H01L2224/29105 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29124 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/29386 , H01L2224/29393 , H01L2224/32145 , H01L2224/32501 , H01L2224/83203
Abstract: A display module and a method for manufacturing thereof are provided. The display module includes a glass substrate; a thin film transistor (TFT) layer provided on a surface of the glass substrate, the TFT layer including a plurality of TFT electrode pads; a plurality of light emitting diodes (LEDs) provided on the TFT layer, each of the plurality of LEDs including LED electrode pads that are electrically connected to respective TFT electrode pads among the plurality of TFT electrode pads; and a light shielding member provided on the TFT layer and between the plurality of LEDs, wherein a height of the light shielding member with respect to the TFT layer is lower than a height of the plurality of LEDs with respect to the TFT layer.
-
公开(公告)号:US11264531B2
公开(公告)日:2022-03-01
申请号:US16688577
申请日:2019-11-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangmoo Park , Doyoung Kwag , Eunhye Kim , Minsub Oh , Yoonsuk Lee
IPC: H01L21/683 , H01L33/00 , H01L21/66 , H01L25/075 , B81C1/00
Abstract: A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a plurality of LEDs arranged on a first substrate to a relay substrate; a memory configured to store characteristic information of each of the plurality of LEDs; and a processor configured to determine arrangement locations of each of the plurality of LEDs on the relay substrate based on the stored characteristic information, and control the transfer part to transfer the plurality of LEDs to the determined arrangement locations.
-
公开(公告)号:US12009452B2
公开(公告)日:2024-06-11
申请号:US17258061
申请日:2019-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doyoung Kwag , Byungchul Kim , Minsub Oh , Sangmoo Park , Eunhye Kim , Yoonsuk Lee
CPC classification number: H01L33/005 , H01L27/156
Abstract: An electronic device is disclosed. The electronic device comprises: a transfer device capable of moving, to a target substrate, a plurality of LEDs arranged in a transfer substrate, and arranging same; a storage unit in which feature information of each of the plurality of LEDs is stored; and a processor for controlling the transfer device such that each of a plurality of LEDs is arranged in an arrangement location on the target substrate of each of a plurality of LEDs on the basis of the stored feature information.
-
公开(公告)号:US11587974B2
公开(公告)日:2023-02-21
申请号:US16861728
申请日:2020-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungchul Kim , Doyoung Kwag , Eunhye Kim , Sangmoo Park , Minsub Oh , Dongyeob Lee , Yoonsuk Lee
Abstract: A micro light emitting diode (LED) transferring method includes setting a micro LED transfer substrate and a target substrate to initial positions and transferring a plurality of micro LEDs arranged in a partial region of the micro LED transfer substrate to the target substrate. Once the micro LEDs in the partial region are transferred to the target substrate, the micro LED transfer substrate is rotated and a plurality of micro LEDs, arranged in a remaining region of the micro LED transfer substrate, are then transferred to the target substrate.
-
公开(公告)号:US11348821B2
公开(公告)日:2022-05-31
申请号:US16929311
申请日:2020-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doyoung Kwag , Byungchul Kim , Sangmoo Park , Minsub Oh
IPC: H01L21/683 , B23K26/03 , B23K26/04 , B23K26/08 , H01L21/67 , H01L25/075 , H01L27/12 , H01L33/62
Abstract: The application is related to a laser transfer apparatus and a method performed by the laser transfer apparatus. The laser transfer apparatus may include: a laser oscillator configured to perform irradiation with a laser beam; a first stage movably disposed below the laser oscillator; a second stage movably disposed below the first stage; a flatness measurement sensor; and a controller. The controller may be configured to control, once a transfer substrate on which a plurality of light emitting diodes (LEDs) are arranged is loaded on the first stage, and a target substrate is loaded on the second stage, the flatness measurement sensor to measure flatness of each of the transfer substrate and the target substrate, and adjust a height of at least one of the first stage or the second stage based on the flatness.
-
公开(公告)号:US11004705B2
公开(公告)日:2021-05-11
申请号:US16282581
申请日:2019-02-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doyoung Kwag , Sangmoo Park , Yoonsuk Lee
IPC: H01L25/075 , H01L21/67 , H01L21/687 , H01L33/62
Abstract: A chip transfer device is provided. The chip transfer device according to an embodiment includes a support, a plurality of pick-up modules disposed on the support in a horizontal direction, and movably connected to the support, and a controller configured to control the plurality of pick-up modules, wherein each of the plurality of pick-up modules is movable while collectively picking up a plurality of chips on a corresponding wafer among a plurality of wafers, and wherein the controller moves and adjusts the plurality of pick-up modules in a horizontal direction.
-
公开(公告)号:US20200328196A1
公开(公告)日:2020-10-15
申请号:US16845485
申请日:2020-04-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seungryong Han , Sangmoo Park , Hyunsun Kim
Abstract: A display panel and a method of manufacturing thereof are provided. The method of manufacturing a display panel includes forming a driving circuit on a substrate; forming an electrode, including a first area and a second area therewith, on the driving circuit; mounting a first micro Light Emitting Diode (LED), for forming a sub pixel, on the first area; forming an absorption layer on the second area, the absorption layer configure to absorb an external light; removing, based on the sub pixel being defective, the absorption layer; and mounting a second micro LED on the second area after removing the absorption layer.
-
公开(公告)号:US20240088329A1
公开(公告)日:2024-03-14
申请号:US17941695
申请日:2022-09-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunhye KIM , Sangmoo Park , Dongyeob Lee , Yoonsuk Lee
IPC: H01L33/40 , H01L25/075 , H01L33/62
CPC classification number: H01L33/40 , H01L25/0753 , H01L33/62
Abstract: A display module includes a thin film transistor (TFT) substrate including a glass substrate, a TFT layer provided at a front surface of the glass substrate and comprising a TFT electrode pad, and a driving circuit provided at a rear surface of the glass substrate and configured to drive the TFT layer, at least one light-emitting diode (LED) comprising at least one LED electrode pad, and a junction structure provided between the at least one LED electrode pad and the TFT electrode pad. The junction structure is formed in a metallically bonded state.
-
公开(公告)号:US11695092B2
公开(公告)日:2023-07-04
申请号:US17674520
申请日:2022-02-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yoonsuk Lee , Sangmoo Park , Doyoung Kwag , Byungchul Kim , Eunhye Kim , Minsub Oh , Dongyeob Lee
CPC classification number: H01L33/0095 , H01L33/62
Abstract: A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.
-
-
-
-
-
-
-
-
-