公开(公告)号：US11822800B2

公开(公告)日：2023-11-21

申请号：US17848820

申请日：2022-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo Oh ,  Sanghyun Choi ,  Heewon Lee

IPC: G06F3/06 ,  G06F12/06

CPC classification number: G06F3/0634 ,  G06F3/0607 ,  G06F3/0611 ,  G06F3/0658 ,  G06F3/0688 ,  G06F12/0646

Abstract: Provided are a storage system including a host and a storage device, and an operation method of the storage system. The storage device includes a memory controller and a memory device, where an operation method of the memory controller includes receiving from the host a first mode change request for a folder, which is a unit for managing at least one file, and a logical address of the at least one file, and in response to the first mode change request, rewriting to the memory device first data corresponding to the logical address in a second operating mode, and invalidating first data which is existing data already written to correspond to the logical address and the first data in a first operating mode, wherein the first mode change request sets a data operation speed to a high-speed mode for the at least one file included in the folder.

公开(公告)号：US11537842B2

公开(公告)日：2022-12-27

申请号：US16448636

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Youngdeok Seo ,  Jinbaek Song ,  Sanghyun Choi

IPC: G06N3/04 ,  G06N5/04 ,  G11C16/26 ,  G11C16/04

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.

公开(公告)号：US11631466B2

公开(公告)日：2023-04-18

申请号：US17239646

申请日：2021-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyun Choi ,  Youngdeok Seo ,  Kangho Roh

IPC: G06F12/00 ,  G11C16/26 ,  G06F3/06 ,  G06N3/04 ,  G06N3/08 ,  G11C16/10 ,  G11C16/16 ,  G11C11/56 ,  G11C16/04

Abstract: A storage device performs a read operation by restoring an ON cell count (OCC) from a power loss protection (PLP) area of a nonvolatile memory. The nonvolatile memory includes a memory blocks, a buffer memory and a controller. The buffer memory stores a first ON cell count (OCC1) indicating a number of memory cells turned ON by a first read voltage and a second ON cell count (OCC2) indicating a number of memory cells turned ON by a second read voltage among the memory cells connected to a reference word line. The controller stores the OCC1 for each of the memory blocks in the PLP area when a sudden power off occurs in the storage device.

公开(公告)号：US11941293B2

公开(公告)日：2024-03-26

申请号：US17518770

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Hyuna Kim ,  Minkyu Kim ,  Donghoo Lim ,  Sanghyun Choi

IPC: G06F3/06 ,  G06F11/10 ,  G06F13/28 ,  G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G06F11/1068 ,  G06F13/28 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/26 ,  G11C11/5671

Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.

公开(公告)号：US11928338B2

公开(公告)日：2024-03-12

申请号：US17393643

申请日：2021-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo Oh ,  Sanghyun Choi ,  Kangho Roh

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2212/7211

Abstract: A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method including: periodically receiving a read command for a first memory block among the plurality of memory blocks; periodically performing a read operation on the first memory block based on the read command; periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.

公开(公告)号：US20230073239A1

公开(公告)日：2023-03-09

申请号：US17812461

申请日：2022-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin Jang ,  Kibeen Jung ,  Donghyub Kang ,  Byeonghui Kim ,  Hyunkyo Oh ,  Sanghyun Choi

IPC: G06F3/06 ,  G06N20/00 ,  G06F12/02

Abstract: A method of operating a storage device includes receiving a learning request for setting a new parameter, evaluating a performance of a workload using a current parameter, performing machine learning in response to the learning request to infer relational expressions between a parameter and corresponding evaluation metrics, using performance evaluation information according to a performance evaluation of the workload and a plurality of learning models, deriving a new parameter using the inferred relational expressions, and applying the new parameter to a firmware algorithm.