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公开(公告)号:US20240324188A1
公开(公告)日:2024-09-26
申请号:US18606436
申请日:2024-03-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kangin KIM , Sangbin AHN , Youngseung CHO , Kyounghwan KIM
IPC: H10B12/00 , H01L29/423 , H01L29/66 , H01L29/78
CPC classification number: H10B12/488 , H01L29/4236 , H01L29/6681 , H01L29/7851 , H10B12/36
Abstract: An integrated circuit device includes a substrate including a plurality of active areas and a plurality of dummy active areas, and defines a plurality of word line trenches that cross the plurality of active areas and the plurality of dummy active area, extend in a first horizontal direction in parallel with each other and have an active side bottom surface exposing the plurality of active areas and a dummy side bottom surface exposing the plurality of dummy active areas. The dummy side bottom surface is at a lower vertical level than the active side bottom surface.
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公开(公告)号:US20240107753A1
公开(公告)日:2024-03-28
申请号:US18466357
申请日:2023-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongwon LIM , Inseok BAEK , Sangbin AHN , Seokyeong CHOI , Seungyong HONG
IPC: H10B12/00
CPC classification number: H10B12/488 , H10B12/50
Abstract: An integrated circuit device including a first cell block on a substrate that includes a first cell area, a first dummy cell area surrounding the first cell area in a plan view, the first dummy cell area including first active regions and second active regions in an outer periphery of the first dummy cell area, the first active regions each having a first size and the second active regions each having a second size larger than the first size, first and second word lines extending in a first direction and alternating with each other in a second direction, each of the first word lines including a first landing area extending between a second active region and a first active region, the first active region being near and apart from the second active region in the second direction, and first word line contacts on the first landing area may be provided.
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