公开(公告)号：US20240324188A1

公开(公告)日：2024-09-26

申请号：US18606436

申请日：2024-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangin KIM ,  Sangbin AHN ,  Youngseung CHO ,  Kyounghwan KIM

IPC: H10B12/00 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H10B12/488 ,  H01L29/4236 ,  H01L29/6681 ,  H01L29/7851 ,  H10B12/36

Abstract: An integrated circuit device includes a substrate including a plurality of active areas and a plurality of dummy active areas, and defines a plurality of word line trenches that cross the plurality of active areas and the plurality of dummy active area, extend in a first horizontal direction in parallel with each other and have an active side bottom surface exposing the plurality of active areas and a dummy side bottom surface exposing the plurality of dummy active areas. The dummy side bottom surface is at a lower vertical level than the active side bottom surface.

公开(公告)号：US20250144768A1

公开(公告)日：2025-05-08

申请号：US18910425

申请日：2024-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heesung KIM ,  Kangin KIM ,  Dongwoo LEE

IPC: B24B37/34 ,  B24B53/007 ,  B24B57/02

Abstract: Provided is a brush aging pad configured to age a surface protrusion of a brush configured to clean a semiconductor wafer in a chemical mechanical polishing cleaning apparatus, the brush aging pad including a pad body, wherein a roughness of at least one surface of the pad body ranges from 1 μm to 5 μm.