公开(公告)号：US20230122198A1

公开(公告)日：2023-04-20

申请号：US17724006

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeongsik RYU ,  Bokyeon WON ,  Kyoungmin KIM ,  Donggeon KIM ,  Sangwook PARK ,  Inseok BAEK

IPC: G11C11/408

Abstract: A memory device includes a first sub wordline driver including a first active region connected to a first wordline through a first direct contact, and a first transistor connected to a first gate line, the first gate line and the first wordline extending in a first direction, and a second sub wordline driver including a second active region connected to a second wordline through a second direct, the second direct contact and first direct contact extending in parallel in a second direction, the second direction being perpendicular to the first direction. A second transistor is connected to a second gate line. The second gate line extends in the first direction. A third wordline driven by a third sub wordline driver is between the first wordline and the second wordline.

公开(公告)号：US20240107753A1

公开(公告)日：2024-03-28

申请号：US18466357

申请日：2023-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwon LIM ,  Inseok BAEK ,  Sangbin AHN ,  Seokyeong CHOI ,  Seungyong HONG

IPC: H10B12/00

CPC classification number: H10B12/488 ,  H10B12/50

Abstract: An integrated circuit device including a first cell block on a substrate that includes a first cell area, a first dummy cell area surrounding the first cell area in a plan view, the first dummy cell area including first active regions and second active regions in an outer periphery of the first dummy cell area, the first active regions each having a first size and the second active regions each having a second size larger than the first size, first and second word lines extending in a first direction and alternating with each other in a second direction, each of the first word lines including a first landing area extending between a second active region and a first active region, the first active region being near and apart from the second active region in the second direction, and first word line contacts on the first landing area may be provided.