公开(公告)号：US20230122198A1

公开(公告)日：2023-04-20

申请号：US17724006

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeongsik RYU ,  Bokyeon WON ,  Kyoungmin KIM ,  Donggeon KIM ,  Sangwook PARK ,  Inseok BAEK

IPC: G11C11/408

Abstract: A memory device includes a first sub wordline driver including a first active region connected to a first wordline through a first direct contact, and a first transistor connected to a first gate line, the first gate line and the first wordline extending in a first direction, and a second sub wordline driver including a second active region connected to a second wordline through a second direct, the second direct contact and first direct contact extending in parallel in a second direction, the second direction being perpendicular to the first direction. A second transistor is connected to a second gate line. The second gate line extends in the first direction. A third wordline driven by a third sub wordline driver is between the first wordline and the second wordline.