Abstract:
Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.
Abstract:
A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.
Abstract:
A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2-nYn (1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.
Abstract:
A method of preparing thermoelectric material particles, the method comprising: disposing a first electrode and a second electrode in a dielectric liquid medium, wherein the first and second electrodes each comprise a thermoelectric material; applying an electrical potential between the first and second electrodes to cause a spark between the first and second electrodes to provide a vaporized thermoelectric material at a sparking point of at least one of the first and second electrodes; and cooling the vaporized thermoelectric material with the dielectric liquid medium to prepare the thermoelectric material particles.
Abstract:
An oxide represented by Formula 1: (Sr2−xAx)(M1−yQy)D2O7+d, Formula 1 wherein A is barium (Ba), M is at least one selected from magnesium (Mg) and calcium (Ca), Q is a Group 13 element, D is at least one selected from silicon (Si) and germanium (Ge), 0≦x≦2.0, 0
Abstract:
A thermoelectric device including: a thermoelectric material layer comprising a thermoelectric material; a transition layer on the thermoelectric material; and a diffusion prevention layer on the transition layer, wherein the thermoelectric material comprises a compound of Formula 1: (A1-aA′a)4-x(B1-bB′b)3-y-zCz Formula 1 wherein A and A′ are different from each other, A is a Group 13 element, and A′ is at least one element of a Group 13 element, a Group 14 element, a rare-earth element, or a transition metal, B and B′ are different from each other, B is a Group 16 element, and B′ is at least one element of a Group 14 element, a Group 15 element, or a Group 16 element, C is at least one halogen atom, a complies with the inequality 0≤a