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公开(公告)号：US10833129B2
公开(公告)日：2020-11-10
申请号：US16436239
申请日：2019-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwan-sik Kim , Chang-hwa Kim , Yoon-Kyoung Kim , Sang-Su Park , Beom-suk Lee , Man-geun Cho , Min-jun Choi
Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.
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公开(公告)号：US10586824B2
公开(公告)日：2020-03-10
申请号：US16003339
申请日：2018-06-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changhwa Kim , JungHun Kim , Sang-Su Park , Beomsuk Lee , Gang Zhang , Jaesung Hur
IPC: H01L27/146 , H01L27/148 , H04N5/335 , H01L25/16 , G02B5/20
Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.
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公开(公告)号：US11233087B2
公开(公告)日：2022-01-25
申请号：US16787408
申请日：2020-02-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changhwa Kim , JungHun Kim , Sang-Su Park , Beomsuk Lee , Gang Zhang , Jaesung Hur
IPC: H01L27/146 , H04N5/335 , H01L27/148 , G02B5/20 , H01L25/16
Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.
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Patent Agency Ranking
公开(公告)号：US11843020B2
公开(公告)日：2023-12-12
申请号：US17577615
申请日：2022-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changhwa Kim , JungHun Kim , Sang-Su Park , Beomsuk Lee , Gang Zhang , Jaesung Hur
IPC: H01L27/146 , H01L27/148 , G02B5/20 , H01L25/16 , H04N25/00
CPC classification number: H01L27/14647 , G02B5/20 , H01L25/167 , H01L27/1463 , H01L27/1464 , H01L27/14621 , H01L27/14638 , H01L27/14645 , H01L27/14665 , H01L27/14689 , H01L27/14812 , H04N25/00 , H01L27/14612
Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.
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公开(公告)号：US12191335B2
公开(公告)日：2025-01-07
申请号：US17522142
申请日：2021-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Su Park , Kwansik Kim , Changhwa Kim , Taemin Kim , Gyuhyun Lim
IPC: H01L27/146
Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.
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公开(公告)号：US11574948B2
公开(公告)日：2023-02-07
申请号：US16711301
申请日：2019-12-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changhwa Kim , Kwansik Kim , Dongchan Kim , Sang-Su Park , Beomsuk Lee , Taeyon Lee , Hajin Lim
IPC: H01L27/146 , H01L51/44 , H01L29/786
Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.
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公开(公告)号：US11205683B2
公开(公告)日：2021-12-21
申请号：US16787429
申请日：2020-02-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwan Sik Kim , Jin Hyung Kim , Chang Hwa Kim , Hong Ki Kim , Sang-Su Park , Beom Suk Lee , Jae Sung Hur
Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.
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公开(公告)号：US11004889B2
公开(公告)日：2021-05-11
申请号：US16658855
申请日：2019-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Su Park , Kwansik Kim , Yoonkyoung Kim , Changhwa Kim , Mangeun Cho , Hyungi Hong
IPC: H01L27/146 , H01L21/762 , H01L21/223 , H01L21/225
Abstract: A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.
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