公开(公告)号：US09691769B2

公开(公告)日：2017-06-27

申请号：US14810739

申请日：2015-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongjun Kim ,  Keeshik Park ,  Jungwoo Song ,  Sang-Jun Lee ,  Donggyun Han ,  Jaerok Kahng

IPC: H01L21/02 ,  H01L21/00 ,  H01L27/108 ,  H01L27/11521

CPC classification number: H01L27/10814 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/11521 ,  H01L27/228

Abstract: A memory device includes a substrate including active areas and isolation areas, trenches in the isolation areas, active patterns in the active areas, the active patterns protruding from the substrate, isolation layers filling the trenches, gate trenches crossing the active patterns and the isolation layers, and gate line stacks filling the gate trenches, a first width of the gate trench in the isolation layer being greater than a second width of the gate trench in the active pattern.

公开(公告)号：US11574912B2

公开(公告)日：2023-02-07

申请号：US17112195

申请日：2020-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Augustin Jinwoo Hong ,  Young-Ju Lee ,  Joon-Yong Choe ,  Jung-Hyun Kim ,  Sang-Jun Lee ,  Hyeon-Kyu Lee ,  Yoon-Chul Cho ,  Je-Min Park ,  Hyo-Dong Ban

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/535

Abstract: A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell gate and a junction portion adjacent to and at least partially distal to the substrate in relation to the buried cell gate, an insulation pattern on the substrate and covering the cell transistors and the device isolation layer, and a bit line structure on the insulation pattern and connected to the junction portion. The bit line structure includes a buffer pattern on the pattern and having a thermal oxide pattern, a conductive line on the buffer pattern, and a contact extending from the conductive line to the junction portion through the buffer pattern and the insulation pattern.

公开(公告)号：US11251188B2

公开(公告)日：2022-02-15

申请号：US16990305

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok-Hyun Kim ,  Joon Young Kang ,  Youngjun Kim ,  Jinhyung Park ,  Ho-Ju Song ,  Sang-Jun Lee ,  Hyeran Lee ,  Bong-Soo Kim ,  Sungwoo Kim

IPC: H01L27/088 ,  H01L21/00 ,  H01L27/108

Abstract: A semiconductor memory device including: a substrate including a cell array region and a boundary region; a first recess region at an upper portion of the substrate in the cell array region; a first bit line extending onto the boundary region and crossing the first recess region; a bit line contact in the first recess region and contacting the first bit line; a second bit line spaced apart from the first recess region and adjacent to the first bit line, the second bit line crossing the cell array region and the boundary region; a cell buried insulation pattern between a side surface of the first bit line contact and an inner wall of the first recess region; and a boundary buried insulation pattern covering sidewalls of the first bit line and the second bit line in the boundary region and including a same material as the cell buried insulation pattern.

公开(公告)号：US09204352B2

公开(公告)日：2015-12-01

申请号：US14456288

申请日：2014-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hak Choi ,  Pyeong-Hwan Wee ,  Sang-Jun Lee ,  Jae-Yeong Kwon ,  Sang-Ho Lee

IPC: H04W36/00 ,  H04W36/18 ,  H04W36/14 ,  H04W36/30 ,  H04W88/06 ,  H04W88/10

CPC classification number: H04W36/18 ,  H04W36/0022 ,  H04W36/0072 ,  H04W36/14 ,  H04W36/30 ,  H04W88/06 ,  H04W88/10

Abstract: An operating method, a base station, and terminal of a cell of a first communication system for a handover between the first communication system and a second communication system are provided. The method includes, receiving, by the base station, a measurement report including measured signal quality, from a terminal, determining, by the base station, a handover initiation to a target radio access network, based on the measured signal quality, transmitting, by the base station, a handover request message to the target radio access network via a core network, receiving, by the base station, radio-related information that is required if the terminal accesses the target radio access network, from the target radio access network via the core network, and transmitting, by the base station, the radio-related information of the target radio access network, to the terminal, wherein the handover between the source radio access network and the target radio access network comprises an inter radio access technology (RAT) handover.

Abstract translation: 提供了用于第一通信系统和第二通信系统之间的切换的第一通信系统的小区的操作方法，基站和终端。 该方法包括：由基站接收来自终端的包括测量信号质量的测量报告，基站根据测量的信号质量，由基站确定切换发起到目标无线电接入网络，通过 所述基站通过核心网向所述目标无线接入网进行切换请求消息，由所述基站从所述目标无线接入网经由所述基站接收所述终端接入所述目标无线接入网络所需的无线电相关信息，经由 核心网络，并且由基站将目标无线电接入网络的无线电相关信息发送到终端，其中源无线电接入网络和目标无线电接入网络之间的切换包括无线接入技术（ RAT）切换。

公开(公告)号：US20190139963A1

公开(公告)日：2019-05-09

申请号：US16106087

申请日：2018-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Augustin Jinwoo HONG ,  Young-Ju Lee ,  Joon-Yong Choe ,  Jung-Hyun Kim ,  Sang-Jun Lee ,  Hyeon-Kyu Lee ,  Yoon-Chul Cho ,  Je-Min Park ,  Hyo-Dong Ban

IPC: H01L27/108 ,  H01L23/535 ,  H01L21/768

Abstract: A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell gate and a junction portion adjacent to and at least partially distal to the substrate in relation to the buried cell gate, an insulation pattern on the substrate and covering the cell transistors and the device isolation layer, and a bit line structure on the insulation pattern and connected to the junction portion. The bit line structure includes a buffer pattern on the pattern and having a thermal oxide pattern, a conductive line on the buffer pattern, and a contact extending from the conductive line to the junction portion through the buffer pattern and the insulation pattern.

公开(公告)号：US09564343B2

公开(公告)日：2017-02-07

申请号：US14990353

申请日：2016-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mongsup Lee ,  Yoonho Son ,  Sang-Jun Lee ,  Munkwon Kang ,  Kyunghyun Kim ,  Inseak Hwang

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/7682 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888

Abstract: A substrate having an insulating layer including an oxide is loaded into a chamber, and at least a part of the insulating layer is removed by injecting a process gas including an etching source gas into the chamber. The removal process is performed in a pulse type in which a first period and a second period are repeated a plurality of times. The etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period. A temperature of the inside of the chamber remains at 100° C. or more during the removal process.

Abstract translation: 具有包含氧化物的绝缘层的衬底被加载到腔室中，并且通过将包括蚀刻源气体的处理气体注入到室中来去除绝缘层的至少一部分。 去除处理以多次重复第一周期和第二周期的脉冲类型执行。 蚀刻源气体在第一时段期间以第一流量供应，并且在第二时段期间以小于第一流量的第二流量供应。 在除去过程中，室内温度保持在100℃或更高。

公开(公告)号：US10886277B2

公开(公告)日：2021-01-05

申请号：US16106087

申请日：2018-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Augustin Jinwoo Hong ,  Young-Ju Lee ,  Joon-Yong Choe ,  Jung-Hyun Kim ,  Sang-Jun Lee ,  Hyeon-Kyu Lee ,  Yoon-Chul Cho ,  Je-Min Park ,  Hyo-Dong Ban

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/535

Abstract: A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell gate and a junction portion adjacent to and at least partially distal to the substrate in relation to the buried cell gate, an insulation pattern on the substrate and covering the cell transistors and the device isolation layer, and a bit line structure on the insulation pattern and connected to the junction portion. The bit line structure includes a buffer pattern on the pattern and having a thermal oxide pattern, a conductive line on the buffer pattern, and a contact extending from the conductive line to the junction portion through the buffer pattern and the insulation pattern.

公开(公告)号：US20160307773A1

公开(公告)日：2016-10-20

申请号：US14990353

申请日：2016-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mongsup Lee ,  Yoonho Son ,  Sang-Jun Lee ,  Munkwon Kang ,  Kyunghyun Kim ,  Inseak Hwang

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/7682 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888

Abstract: A substrate having an insulating layer including an oxide is loaded into a chamber, and at least a part of the insulating layer is removed by injecting a process gas including an etching source gas into the chamber. The removal process is performed in a pulse type in which a first period and a second period are repeated a plurality of times. The etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period. A temperature of the inside of the chamber remains at 100° C. or more during the removal process.

Abstract translation: 具有包含氧化物的绝缘层的衬底被加载到腔室中，并且通过将包括蚀刻源气体的处理气体注入到室中来去除绝缘层的至少一部分。 去除处理以多次重复第一周期和第二周期的脉冲类型执行。 蚀刻源气体在第一时段期间以第一流量供应，并且在第二时段期间以小于第一流量的第二流量供应。 在除去过程中，室内温度保持在100℃或更高。

公开(公告)号：US20130311983A1

公开(公告)日：2013-11-21

申请号：US13675877

申请日：2012-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jun Lee

IPC: G06F9/445

CPC classification number: G06F8/65

Abstract: Disclosed is a display apparatus, including: an image processing part which processes an image signal; a display part which displays an image corresponding to the image signal; a storing part which stores a control program and update information related to the control program; a communication part which performs a data communication with a portable apparatus that is assessable to an upgrade server; and a controller which controls the image processing part to display the image corresponding to the image signal based on the control program, and controls the communication part to transmit the upgrade information related to the control program stored in the storing part to the upgrade server through the portable apparatus, and to receive an upgraded control program.

Abstract translation: 公开了一种显示装置，包括：处理图像信号的图像处理部; 显示与图像信号对应的图像的显示部; 存储部，其存储与所述控制程序有关的控制程序和更新信息; 通信部件，其与可升级服务器可评估的便携式设备进行数据通信; 以及控制器，其控制所述图像处理部分基于所述控制程序显示与所述图像信号对应的图像，并且控制所述通信部件通过所述控制程序将存储在所述存储部件中的与所述存储部件中存储的所述控制程序相关的升级信息通过 便携式设备，并且接收升级的控制程序。