公开(公告)号：US20190214358A1

公开(公告)日：2019-07-11

申请号：US16038334

申请日：2018-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Su HA ,  Gun Rae KIM ,  Cheol Hyeon PARK ,  In Hak BAICK ,  Sang Chul SHIN

IPC: H01L23/00

CPC classification number: H01L24/17 ,  H01L23/562 ,  H01L24/08 ,  H01L24/11 ,  H01L24/32 ,  H01L24/81 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079

Abstract: A semiconductor device including a high-reliability bump structure including a pillar structure is provided. The semiconductor device includes a substrate, a connection pad on the substrate, and a bump structure on the connection pad, wherein the bump structure includes a pillar structure having a side wall and an upper surface, a metal protection film including a first portion extending along the side wall of the pillar structure and a second portion extending along the upper surface of the pillar structure, and a solder layer on the second portion of the metal protection film.

公开(公告)号：US20230067356A1

公开(公告)日：2023-03-02

申请号：US17853116

申请日：2022-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Wook KIM ,  A-Young KIM ,  Seong Won JEONG ,  Sang Su HA

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: A semiconductor package capable of reducing or preventing cracks from occurring in a conductive bump and a method for manufacturing the same. The semiconductor package includes a semiconductor chip; a first conductive bump; a first re-distribution layer which is provided between the semiconductor chip and the first conductive bump and electrically connects the semiconductor chip and the first conductive bump; and a buffer structure which formed to fill up a space between a side surface of the first conductive bump and one surface of the first re-distribution layer, in which the buffer structure includes a plurality of pores.

公开(公告)号：US20190244884A1

公开(公告)日：2019-08-08

申请号：US16126430

申请日：2018-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Young YOON ,  Yong Sang CHO ,  Sang Su HA

IPC: H01L23/498 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L23/49816 ,  H01L23/53295 ,  H01L24/06 ,  H01L2224/0401 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2924/15311

Abstract: A semiconductor device includes a semiconductor chip including a gate structure, the semiconductor chip having a first region and a second region that surrounds sides of the first region, first solder balls on the first region of the semiconductor chip and containing a first weight percent of silver, second solder balls on the first region of the semiconductor chip and containing a second weight percent of silver greater than the first weight percent, and third solder balls on the second region of the semiconductor chip and containing a third weight percent of silver less than the first weight percent.