公开(公告)号：US20190244884A1

公开(公告)日：2019-08-08

申请号：US16126430

申请日：2018-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Young YOON ,  Yong Sang CHO ,  Sang Su HA

IPC: H01L23/498 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L23/49816 ,  H01L23/53295 ,  H01L24/06 ,  H01L2224/0401 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2924/15311

Abstract: A semiconductor device includes a semiconductor chip including a gate structure, the semiconductor chip having a first region and a second region that surrounds sides of the first region, first solder balls on the first region of the semiconductor chip and containing a first weight percent of silver, second solder balls on the first region of the semiconductor chip and containing a second weight percent of silver greater than the first weight percent, and third solder balls on the second region of the semiconductor chip and containing a third weight percent of silver less than the first weight percent.