OPTICAL PROXIMITY CORRECTION (OPC) MODELING METHODS AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20200342071A1

    公开(公告)日:2020-10-29

    申请号:US16693903

    申请日:2019-11-25

    Inventor: Sang Chul YEO

    Abstract: A method for manufacturing a semiconductor device includes performing an optical proximity correction (OPC) process on a designed layout based on a final model signal obtained according to an OPC modeling process to generate a corrected layout, the OPC modeling process including, selecting a transmittance value of a sub-layout pattern of a sub-layout included in a target layout, the transmittance value being a parameter of an OPC model and representing an intensity of light that transmits through a photomask, and generating a final model signal based on the transmittance value of the sub-layout pattern, and forming a photoresist pattern on a substrate using the photomask generated based on the corrected layout.

    METHOD OF FORMING OPTICAL PROXIMITY CORRECTION MODEL AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20230062677A1

    公开(公告)日:2023-03-02

    申请号:US17735593

    申请日:2022-05-03

    Abstract: Disclosed are a method of forming an optical proximity correction (OPC) model and/or a method of fabricating a semiconductor device using the same. The method of forming the OPC model may include obtaining a scanning electron microscope (SEM) image, which is an average image of a plurality of images taken using one or more scanning electron microscopes, and a graphic data system (GDS) image, which is obtained by imaging a designed layout, aligning the SEM image and the GDS image, performing an image filtering process on the SEM image, extracting a contour from the SEM image, and verifying the contour. The verifying of the contour may be performed using a genetic algorithm. Variables in the genetic algorithm may include first parameters related to the image alignment process, second parameters related to the image filtering process, and third parameters related to a critical dimension (CD) measurement process.

    ELECTRONIC DEVICE SUPPORTING MANUFACTURE OF SEMICONDUCTOR DEVICE AND OPERATING METHOD OF ELECTRONIC DEVICE

    公开(公告)号:US20240386635A1

    公开(公告)日:2024-11-21

    申请号:US18528275

    申请日:2023-12-04

    Abstract: Disclosed is an operating method of an electronic device which includes a processor and supports manufacture of a semiconductor device. The operating method includes receiving, at the processor, a layout image for the manufacture of the semiconductor device and a captured image generated by capturing the semiconductor device actually manufactured, aligning, at the processor, the layout image and the captured image based on a result of emphasizing edges and corners of the layout image and the captured image, and performing, at the processor, learning based on the aligned layout image and the aligned captured image such that a first modified layout image is generated from the layout image, and the semiconductor device is manufactured based on a second modified layout image generated from the layout image.

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