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公开(公告)号：US20250117924A1
公开(公告)日：2025-04-10
申请号：US18631579
申请日：2024-04-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Chul YEO , Jae Won YANG
IPC: G06T7/00
Abstract: A method for generating a proximity correction model which is performed by a computing system is provided. The method comprises acquiring a plurality of shot images on a wafer after performing a first process using a first layout, generating an overlap image obtained by overlap of the plurality of shot images, and performing machine learning on the proximity correction model, using an image of the first layout and the overlap image.
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