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公开(公告)号：US20180347766A1
公开(公告)日：2018-12-06
申请号：US15849022
申请日：2017-12-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Jin Wook Chung
CPC classification number: F21K9/237 , F21K9/232 , F21K9/235 , F21V3/061 , F21Y2115/10 , H01L25/0753 , H01L33/08 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/60 , H01L33/62 , H01L33/642
Abstract: A light emitting diode (LED) module array including: a plurality of LED groups connected to each other in series, each LED group including a single rod-shaped LED module or a plurality of LED modules connected to each other in parallel, wherein a number of LED modules included in a first LED group is different from a number of LED modules included in a second LED group.
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公开(公告)号：US11239385B2
公开(公告)日：2022-02-01
申请号：US16844616
申请日：2020-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeonghwan Jang , Jae-Yoon Kim , Sungwon Ko , Junghee Kwak , Sangseok Lee , Suyeol Lee , Seungwan Chae , Pun Jae Choi
Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.
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公开(公告)号：US10374003B2
公开(公告)日：2019-08-06
申请号：US15850232
申请日：2017-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Jacob Chang-Lin Tarn , Han Kyu Seong , Jin Hyuk Song , Yoon Joon Choi
IPC: H01L27/00 , H01L33/00 , H01L27/15 , H01L33/18 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/62 , H01L25/075 , F21K9/232 , F21K9/235 , F21K9/237 , H01L33/06 , H01L31/105 , H01L31/0352 , H01L31/00 , F21V31/00 , F21Y115/10
Abstract: A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.
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公开(公告)号：US09997663B2
公开(公告)日：2018-06-12
申请号：US15604469
申请日：2017-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
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公开(公告)号：US09305906B2
公开(公告)日：2016-04-05
申请号：US14336973
申请日：2014-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC: H01L33/56 , H01L25/13 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/44 , H01L33/48 , H01L33/54 , H05B33/08 , H01L25/075 , H01L33/50
CPC classification number: H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
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Patent Agency Ranking
公开(公告)号：US09680050B2
公开(公告)日：2017-06-13
申请号：US14612244
申请日：2015-02-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
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公开(公告)号：US09450151B2
公开(公告)日：2016-09-20
申请号：US14717942
申请日：2015-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Pun Jae Choi , Young Soo Park , Yung Ho Ryu , Tae Young Park , Jin Gi Hong
CPC classification number: H01L33/382 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/16225 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.
Abstract translation: 半导体发光器件包括具有彼此相对的第一表面和第二表面的层压半导体结构，分别形成第一表面和第二表面的第一导电类型半导体层和第二导电型半导体层， 活动层 第一和第二电极分别设置在叠层半导体结构的第一表面和层叠半导体结构的第二表面上。 连接电极延伸到要连接到第二电极的第一表面。 支撑基板设置在第二电极上，绝缘层使连接电极与有源层和第一导电型半导体层绝缘。
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8.发明授权公开(公告)号：US08981395B2
公开(公告)日：2015-03-17
申请号：US14101242
申请日：2013-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
CPC classification number: H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
Abstract translation: 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层叠的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。
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公开(公告)号：US10256218B2
公开(公告)日：2019-04-09
申请号：US15941299
申请日：2018-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyoung Jun Kim , Yong Min Kwon , Geun Woo Ko , Pun Jae Choi , Dong Ho Kim
IPC: H01L25/075 , H01L33/62 , H01L33/56 , H01L33/54
Abstract: A light emitting device package includes: a plurality of light emitting chips configured to emit respective wavelength lights, each chip comprising electrodes at a bottom of the chip to form a flip-chip structure; a plurality of wirings directly connected to the electrodes of the chips, respectively; a plurality of electrode pads disposed below the chips and directly connected to the wirings, respectively; and a molding member integrally formed in a single layer structure to cover upper surfaces and side surfaces of the chips, and including a translucent material having a predetermined transmittance, wherein the wirings are disposed below a lower surface of the molding member.
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公开(公告)号：US08975653B2
公开(公告)日：2015-03-10
申请号：US14080455
申请日：2013-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Pun Jae Choi , Seung Yu Kim , Jin Bock Lee
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
Abstract translation: 提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。 第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。
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