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US09450151B2 Semiconductor light-emitting device 有权
半导体发光装置

Semiconductor light-emitting device
Abstract:
A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.
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