公开(公告)号：US11812607B2

公开(公告)日：2023-11-07

申请号：US17685794

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmi Yoon ,  Donghyun Im ,  Jooyub Kim ,  Juhyung We ,  Namhoon Lee ,  Chunhyung Chung

IPC: H01L21/768 ,  H10B12/00 ,  H01L21/762 ,  H01L29/06

CPC classification number: H10B12/34 ,  H01L21/76224 ,  H01L21/76829 ,  H01L29/0653 ,  H10B12/053 ,  H10B12/315

Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.

公开(公告)号：US20240149314A1

公开(公告)日：2024-05-09

申请号：US18213853

申请日：2023-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo Noh ,  Kyoungwoo Kim ,  Youngseok Jung ,  Youngjin Hong ,  Soochan Oh ,  Sungwoo Shin ,  Namhoon Lee ,  Bongju Lee

IPC: B08B13/00 ,  B08B1/00 ,  B08B1/04 ,  B08B3/02

CPC classification number: B08B13/00 ,  B08B1/002 ,  B08B1/04 ,  B08B3/02

Abstract: Provided is a substrate processing apparatus configured to process a substrate having a notch including a plurality of rollers contacting a circumference of the substrate and configured to rotate the substrate, a first sensor configured to sense an impact between the plurality of rollers and the substrate, and a signal processing unit configured to detect revolutions per unit time of the substrate, based on a first sensing signal output by the first sensor.

公开(公告)号：US11296089B2

公开(公告)日：2022-04-05

申请号：US16850223

申请日：2020-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmi Yoon ,  Donghyun Im ,  Jooyub Kim ,  Juhyung We ,  Namhoon Lee ,  Chunhyung Chung

IPC: H01L27/108 ,  H01L21/762 ,  H01L29/06

Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.