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公开(公告)号:US20170133263A1
公开(公告)日:2017-05-11
申请号:US15342456
申请日:2016-11-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyungseok MIN , Moojin KIM , Seongjin NAM , Sughyun SUNG , YoungHoon SONG , Youngmook OH
IPC: H01L21/762 , H01L21/3065 , H01L21/02
CPC classification number: H01L21/76224 , H01J2237/3347 , H01L21/02118 , H01L21/3065 , H01L21/31116 , H01L27/10879
Abstract: A method of fabricating a semiconductor device may include forming trenches in a substrate to define a fin structure extending in a direction, forming a device isolation layer to fill the trenches, and removing an upper portion of the device isolation layer to expose an upper side surface of the fin structure. The exposing of the upper side surface of the fin structure may include repeatedly performing an etching cycle including a first step and a second step, and an etching rate of the device isolation layer to the fin structure may be higher in the second step than in the first step.
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公开(公告)号:US20160056017A1
公开(公告)日:2016-02-25
申请号:US14799588
申请日:2015-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Moojin KIM , Bongseong KIM , Unjoo LEE
IPC: H01J37/32
CPC classification number: H01J37/321 , H01J37/32706 , H01J37/32972
Abstract: A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nth period of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1th period of the DC pulse signal, where “n” denotes a natural number.
Abstract translation: 一种等离子体装置,包括设置在处理室中的卡盘,将处理气体供应到处理室中的气体供应单元,配置成在卡盘上产生等离子体的等离子体产生单元,施加DC脉冲信号的直流(DC)功率发生器 并且传感器监测等离子体的状态并向DC发电机提供感测信号。 DC脉冲信号的每个周期包括负脉冲持续时间,正脉冲持续时间和脉冲关闭持续时间。 如果在直流脉冲信号的第n个周期中发生感测信号的信号干扰,则直流发电机改变正脉冲的大小和/或直流脉冲的第n + 1个周期的正脉冲持续时间的长度 信号,其中“n”表示自然数。
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