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公开(公告)号:US20180053674A1
公开(公告)日:2018-02-22
申请号:US15469620
申请日:2017-03-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaehyun LEE , Sangdong KWON , Tae-Hwa KIM , Minjoon PARK
IPC: H01L21/683 , H01J37/32
CPC classification number: H01L21/6831 , H01J37/32642 , H01J37/32715 , H01L21/6833 , H01L21/68735 , H01L21/68757
Abstract: Disclosed are an electrostatic chuck assembly and a substrate processing apparatus including the same. The substrate processing apparatus comprises a process chamber including an inner space therein, a gas supply unit supplying a process gas into the process chamber, a top electrode section in the process chamber and generating plasma from the process gas, and an electrostatic chuck assembly below the top electrode section in the process chamber. The electrostatic chuck assembly comprises an electrostatic chuck supporting a substrate, a focus ring surrounding an upper portion of the electrostatic chuck, an electrode ring below the focus ring and including a different material from the focus ring, and a brazed bonding layer brazing the focus ring and the electrode ring together, the brazed bonding layer being between the focus ring and the electrode ring.
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公开(公告)号:US20210248212A1
公开(公告)日:2021-08-12
申请号:US17051544
申请日:2019-06-12
Inventor: Kuenhwan KWAK , Donguk KIM , Byunghoon KANG , Minjoon PARK , Seongman LEE , Daehee JANG , Yunjong JEONG
Abstract: Provided is a method of protecting an application from an abnormal environment in an electronic device. The electronic device registers, in the electronic device, a handler capable of being called as a preset fault is generated in the application, after the handler is registered, executes a protection code for generating the preset fault in the application, determines whether an environment where the application is executed is an abnormal environment, based on whether the handler has been called as the protection code is executed, and performs an operation for protecting the application, based on a result of the determination.
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公开(公告)号:US20150079791A1
公开(公告)日:2015-03-19
申请号:US14326960
申请日:2014-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Minjoon PARK , Junho YOON , Je-Woo HAN , Chan-Won KIM
IPC: H01L21/308 , H01L49/02
CPC classification number: H01L21/3086 , H01L21/3085 , H01L21/31144 , H01L23/544 , H01L28/40 , H01L28/91 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: A method of fabricating a semiconductor device is provided. The method may include forming an interlayered insulating layer on a structure with a cell region and a peripheral circuit region, forming a first mask layer on the interlayered insulating layer, forming trenches in the first mask layer exposing the interlayered insulating layer by patterning the first mask layer on the peripheral circuit region, and forming key mask patterns in the trenches. An etch selectivity of the first mask patterns with respect to the interlayered insulating layer may be greater than that of the key mask patterns with respect to the interlayered insulating layer.
Abstract translation: 提供一种制造半导体器件的方法。 该方法可以包括在具有单元区域和外围电路区域的结构上形成层间绝缘层,在层间绝缘层上形成第一掩模层,在第一掩模层中形成通过图案化第一掩模 并且在沟槽中形成键掩模图案。 第一掩模图案相对于层间绝缘层的蚀刻选择性可以大于关于键层掩模图案相对于层间绝缘层的蚀刻选择性。
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