公开(公告)号：US11747721B2

公开(公告)日：2023-09-05

申请号：US17154279

申请日：2021-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Useong Kim ,  Mincheol Kang ,  Woojoo Sim

IPC: G03F7/20 ,  G06N3/08 ,  G03F1/36 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F1/36 ,  G03F7/70308 ,  G03F7/70441 ,  G06N3/08 ,  H01L21/027

Abstract: Provided are a method of forming a mask, the method accurately and quickly restoring an image on the mask to the shape on the mask, and a mask manufacturing method using the method of forming the mask. The method of forming a mask includes obtaining first images by performing rasterization and image correction on shapes on the mask corresponding to first patterns on a wafer, obtaining second images by applying a transformation to the shapes on the mask, performing deep learning based on a transformation relationship between ones of the first images and ones of the second images corresponding to the first images, and forming a target shape on the mask corresponding to a target pattern on the wafer, based on the deep learning. The mask is manufactured based on the target shape on the mask.

公开(公告)号：US20220180503A1

公开(公告)日：2022-06-09

申请号：US17384366

申请日：2021-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heungsuk Oh ,  Mincheol Kang ,  Sangwook Park

IPC: G06T7/00 ,  G06K9/62 ,  G06T7/50 ,  G06T7/60 ,  G06K9/82 ,  G06K9/52 ,  G06K9/40 ,  G03F1/36

Abstract: A method of fabricating a semiconductor device includes generating a mask based on second layout data obtained by applying an OPC model to first layout data and performing a semiconductor process using the mask on a substrate, obtaining a plurality of pattern images by selecting a plurality of sample patterns from the substrate, selecting sample images corresponding to the sample patterns from each of the first layout data, the second layout data, and simulation data obtained by performing a simulation based on the second layout data, generating a plurality of input images corresponding to the sample patterns by blending the sample images corresponding to the sample patterns, respectively, and generating an error prediction model for the OPC model by training a machine learning model using a data set including the input images and the pattern images.

公开(公告)号：US12229944B2

公开(公告)日：2025-02-18

申请号：US17842206

申请日：2022-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyenhee Lee ,  Mincheol Kang ,  Sooryong Lee

IPC: G06T7/00 ,  G06N3/04 ,  G06N3/045 ,  G06T7/11

Abstract: The inventive concept provides a defect detection method of a semiconductor element, capable of promptly and accurately detecting a defect, and predicting a type of the defect with respect to various defects of the semiconductor element, and a semiconductor element manufacturing method including the defect detection method. The defect detection method is capable of promptly and accurately detecting the defect, and predicting the type of the defect with respect to various defects of the semiconductor element, by generating a first segmentation image and a second segmentation image; converting the first segmentation image and the second segmentation image into an image of a first color and a second color, respectively; generating a combination image; classifying the type of a defect; generating a defect detection model by using deep learning, and detecting a defect of the semiconductor element by using a defect detection process using the defect detection model.

公开(公告)号：US11699227B2

公开(公告)日：2023-07-11

申请号：US17384366

申请日：2021-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heungsuk Oh ,  Mincheol Kang ,  Sangwook Park

IPC: G06K9/00 ,  G06T7/00 ,  G06T7/50 ,  G06T7/60 ,  G03F1/36 ,  G06V10/30 ,  G06V10/42 ,  G06V10/88 ,  G06F18/22 ,  G06F18/214

CPC classification number: G06T7/0006 ,  G03F1/36 ,  G06F18/2148 ,  G06F18/22 ,  G06T7/50 ,  G06T7/60 ,  G06V10/30 ,  G06V10/42 ,  G06V10/88 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: A method of fabricating a semiconductor device includes generating a mask based on second layout data obtained by applying an OPC model to first layout data and performing a semiconductor process using the mask on a substrate, obtaining a plurality of pattern images by selecting a plurality of sample patterns from the substrate, selecting sample images corresponding to the sample patterns from each of the first layout data, the second layout data, and simulation data obtained by performing a simulation based on the second layout data, generating a plurality of input images corresponding to the sample patterns by blending the sample images corresponding to the sample patterns, respectively, and generating an error prediction model for the OPC model by training a machine learning model using a data set including the input images and the pattern images.

公开(公告)号：US11562934B2

公开(公告)日：2023-01-24

申请号：US16992271

申请日：2020-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sooyong Lee ,  Mincheol Kang ,  Bongsoo Kang ,  Jeeyong Lee

IPC: H01L21/66 ,  H01L27/11556 ,  G06N3/08 ,  G06N3/04 ,  H01L27/11582

Abstract: A method of manufacturing a semiconductor device includes forming a lower mold having lower layers stacked on a substrate and lower channel structures passing therethrough; forming an upper mold including upper layers stacked on the lower mold and upper channel structures passing therethrough; removing the upper mold to expose an upper surface of the lower mold; separating an upper original image in which traces of the upper channel structures are displayed, and a lower original image in which the lower channel structures are displayed, from an original image capturing the upper surface of the lower mold; inputting the upper original image into a learned neural network to acquire an upper restored image in which cross sections of the upper channel structures are displayed; and comparing the upper restored image with the lower original image to verify an alignment state of the upper and lower molds.