公开(公告)号：US09496223B2

公开(公告)日：2016-11-15

申请号：US15071452

申请日：2016-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Ok Lee ,  Nam-Gun Kim ,  Gyuhwan Oh ,  Heesook Park ,  Hyun-Jung Lee ,  Kyungho Jang

IPC: H01L23/532

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/53209 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

Abstract translation: 覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。 间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。 因此，可以提高半导体器件的可靠性。 还描述了相关的制造方法。