公开(公告)号：US10510429B2

公开(公告)日：2019-12-17

申请号：US16007528

申请日：2018-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-yong Choi ,  Kyung-ryun Kim ,  Woong-dai Kang ,  Hyun-chul Yoon

IPC: G11C29/04 ,  G11C29/24 ,  G11C29/12 ,  G11C11/4094 ,  G11C11/408

Abstract: A memory device including a memory cell array connected to a first bit line, first word lines, and second word lines, the memory cell array including a first memory cell and a second memory cell, the first memory cell being connected between the first word lines and the first bit line, and the second memory cell being connected between the second word line and the first bit line; a first word line driver configured to drive the first word lines; a second word line driver configured to drive the second word lines; and a test manager configured to drive second word lines to change a capacitance of the first bit line, and after the capacitance of the first bit line is changed, drive first word lines to test the first word lines.

公开(公告)号：US09330775B2

公开(公告)日：2016-05-03

申请号：US14150320

申请日：2014-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Kyung-ryun Kim ,  Sang-yong Yoon

IPC: G11C11/34 ,  G11C16/28 ,  G11C11/56 ,  G11C16/04

CPC classification number: G11C16/28 ,  G11C11/5642 ,  G11C16/0483

Abstract: A flash memory, a flash memory system, and an operating method thereof. The method of operating a flash memory includes counting the number of memory cells having threshold voltages included in a first adjacent threshold voltage range (defined by a first reference read voltage for distinguishing between initially separated adjacently located threshold voltage distributions and a first search read voltage having a first voltage difference from the first reference read voltage), and a second adjacent threshold voltage range (defined by the first reference read voltage and a second search read voltage having a second voltage difference from the first reference read voltage), and setting a first optimal read voltage based on the difference between the first and second counted numbers of the memory cells.

Abstract translation: 闪存，闪存系统及其操作方法。 操作闪速存储器的方法包括对具有包括在第一相邻阈值电压范围内的阈值电压的存储器单元的数量进行计数（由用于区分初始分离的相邻阈值电压分布的第一参考读取电压和具有 与第一参考读取电压的第一电压差）和第二相邻阈值电压范围（由第一参考读取电压和具有与第一参考读取电压的第二电压差的第二搜索读取电压定义），并且设置第一 基于存储器单元的第一和第二计数之间的差的最佳读取电压。