公开(公告)号：US20160260726A1

公开(公告)日：2016-09-08

申请号：US15047840

申请日：2016-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Jin SHIN ,  Kyung-Hyun KIM ,  Jung-Hun NO ,  Choong-Kee SEONG ,  Seung-Pil CHUNG ,  Jung-Geun JEE

IPC: H01L27/115 ,  H01L21/8234

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L21/762 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/823462 ,  H01L21/823481 ,  H01L29/66825

Abstract: A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is defined between structures including the active pattern, the preliminary tunnel insulation pattern and the preliminary charge storage pattern. A preliminary isolation pattern partially fills the trench. A dielectric layer and a control gate electrode layer are formed on the preliminary charge storage pattern and the preliminary isolation pattern. The control gate electrode layer, the dielectric layer, the preliminary charge storage pattern and the preliminary tunnel insulation pattern are patterned to form gate structures including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern and a control gate electrode. The preliminary isolation pattern is isotropically etched to form an isolation pattern and a first air gap. An insulating interlayer is formed between the gate structures to keep the first air gap.

Abstract translation: 在沿着一个方向延伸的每个有源图案上形成初始隧道绝缘图案和初步电荷存储图案，并且在包括有源图案，预备隧道绝缘图案和预备电荷存储图案的结构之间限定沟槽。 初步隔离图案部分地填充沟槽。 在初步电荷存储图案和初步隔离图案上形成电介质层和控制栅极电极层。 对控制栅极电极层，电介质层，预备电荷存储图案和预备隧道绝缘图案进行图案化以形成包括隧道绝缘图案，电荷存储图案，电介质层图案和控制栅电极的栅极结构。 预先隔离图案被各向同性地蚀刻以形成隔离图案和第一气隙。 在栅极结构之间形成绝缘中间层以保持第一气隙。

公开(公告)号：US20150355551A1

公开(公告)日：2015-12-10

申请号：US14734106

申请日：2015-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Ok KIM ,  Byoung-Moon YOON ,  Kyung-Hyun KIM ,  Yong-Sun KO

IPC: G03F7/42

CPC classification number: G03F7/423

Abstract: A system for removing a photoresist includes a solution storage configured to store a preliminary photoresist removal solution, a solution activation unit configured to convert the preliminary photoresist removal solution from the solution storage into an activated photoresist removal solution, and a photoresist removal unit configured to receive the activated photoresist removal solution from the solution activation unit, and configured to load a substrate including a photoresist pattern formed thereon.

Abstract translation: 一种用于去除光致抗蚀剂的系统包括配置成存储初步光致抗蚀剂去除溶液的溶液储存器，配置成将来自溶液储存器的初步光致抗蚀剂去除溶液转化成活性光致抗蚀剂去除溶液的溶液激活单元，以及被配置为接收 来自溶液激活单元的活化的光致抗蚀剂去除溶液，并且被配置为加载包括其上形成的光致抗蚀剂图案的基板。