摘要:
A method for predicting characteristics of a compound includes collecting a first experimental information database for characteristics of reference compounds according to a quantum phenomenon, collecting a simulation database for characteristics of the reference compounds according to the quantum phenomenon by applying density functional theory methods, comparing the simulation database to the first experimental information database for each reference compound to calculate accuracy of the simulation database, clustering the reference compounds into clusters based on the accuracy of the simulation database and designating a proper density functional theory method for each cluster, comparing a similarity between a test compound to predict a characteristic according to the quantum phenomenon and the reference compounds included in each cluster, determining a proper density functional theory method for the test compound according to the similarity, and conducting a simulation with the test compound according to the determined density functional theory method.
摘要:
A film for writing may include: a rough layer, including a non-flat surface, configured to transmit a first light beam and a second light beam of different wavelength bands; and/or a photonic crystal layer, arranged on the rough layer, configured to transmit the first light beam and configured to reflect the second light beam. A film for writing, which transmits visible rays, may include: a non-flat layer. A difference between a maximum thickness and a minimum thickness of the non-flat layer may be from about 220 nanometers (nm) to about 2 microns (μm). A film for writing may include: a first layer; and/or a second layer on the first layer. The first layer may be configured to transmit first and second light beams of different frequency bands. The second layer may be configured to transmit the first light beam, but to reflect the second light beam.
摘要:
A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of Ge2Sb2+aTe5+b, in which a and b satisfy the following relations: −0.2