公开(公告)号：US20230230832A1

公开(公告)日：2023-07-20

申请号：US18095243

申请日：2023-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggeon GU ,  Won-Jun LEE ,  Changyup PARK ,  Dongho AHN ,  Yewon KIM ,  Kwonyoung KIM ,  Okhyeon KIM

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/06 ,  C23C16/56

CPC classification number: H01L21/02568 ,  H01L21/0262 ,  H01L21/02614 ,  C23C16/45527 ,  C23C16/06 ,  C23C16/56 ,  H10B63/10

Abstract: A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of Ge2Sb2+aTe5+b, in which a and b satisfy the following relations: −0.2