公开(公告)号：US20140185088A1

公开(公告)日：2014-07-03

申请号：US14048084

申请日：2013-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangwoo LEE ,  Dae-hyun KIM ,  Jin-hyung KIM

IPC: H04N1/00

CPC classification number: H04N1/32117 ,  H04M2250/04 ,  H04N1/00225 ,  H04N1/00307 ,  H04N1/00342 ,  H04N1/00411 ,  H04N1/00474 ,  H04N1/00482 ,  H04N1/00962 ,  H04N1/00973 ,  H04N1/32106 ,  H04N2201/001 ,  H04N2201/006 ,  H04N2201/0094 ,  H04N2201/3205 ,  H04N2201/3212 ,  H04N2201/3223 ,  H04N2201/3278 ,  H04W4/80 ,  H04W88/06

Abstract: An image forming apparatus supporting a near field communication (NFC) function and a method of performing setting an image job by using an NFC device. The method includes tagging an NFC device to receive setting information stored in the NFC device and performing an image job based on the received setting information.

Abstract translation: 一种支持近场通信（NFC）功能的图像形成装置和使用NFC装置执行图像作业的方法。 该方法包括标记NFC设备以接收存储在NFC设备中的设置信息，并且基于接收到的设置信息执行图像作业。

公开(公告)号：US20250165339A1

公开(公告)日：2025-05-22

申请号：US18753410

申请日：2024-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongwoo LEE ,  Kwangwoo LEE ,  Jeongkeun PARK ,  Heejun OH ,  Byungchan PARK

IPC: G06F11/10

Abstract: An operating method of a memory controller is provided. The method includes: in a first super block including first blocks of memory chips, storing a first read level with respect to a first block in a first memory as first super block read level (RL) information; storing the first read level in a second memory as first chip RL information corresponding to the first memory chip; during the read operation on the first blocks included in the first super block, controlling the read operation based on the first super block RL information stored in the first memory; and based on a failure occurring in data read from the first block of the first memory chip by using the first super block RL information, controlling the read operation on the first block of the first memory chip based on the first chip RL information stored in the second memory.

公开(公告)号：US20220172794A1

公开(公告)日：2022-06-02

申请号：US17393797

申请日：2021-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangwoo LEE ,  Chanha KIM ,  Heewon LEE

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26

Abstract: In a method of writing data in a nonvolatile memory device, a write command, a write address and write data to be programmed are received. Offset information representing a verification level is received. The offset information is provided when the write data corresponds to a distribution deterioration pattern by checking an input/output (I/O) pattern of the write data. When the offset information is received, the write data is programmed based on the offset information such that at least one state among a plurality of states included in a distribution of threshold voltages of memory cells in which the write data is stored is changed.

公开(公告)号：US20220172785A1

公开(公告)日：2022-06-02

申请号：US17534989

申请日：2021-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin YOO ,  Yunjung LEE ,  Heewon LEE ,  Kwangwoo LEE

IPC: G11C16/26 ,  G11C16/34

Abstract: Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.