公开(公告)号：US20230361161A1

公开(公告)日：2023-11-09

申请号：US18347850

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Jin LIM ,  Ki Nam KIM ,  Hyung Suk JUNG ,  Kyoo Ho JUNG ,  Ki Hyun HWANG

IPC: H01L21/28 ,  H01L21/02

CPC classification number: H01L28/56 ,  H01L21/02197 ,  H01L21/02192 ,  H01L21/02189 ,  H01L21/02181 ,  H01L21/28247 ,  H10B53/30 ,  H10B12/00

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

公开(公告)号：US20250098180A1

公开(公告)日：2025-03-20

申请号：US18829396

申请日：2024-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Nam KIM ,  Dae Won HA ,  Dong Guk CHO

IPC: H10B80/00 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: There is provided a semiconductor device manufactured using a method that reduces a manufacturing time and cost of the semiconductor device. The semiconductor device includes a first semiconductor device module including: a first lower bonding pad; a second lower bonding pad; first upper bonding pads; and a memory cell disposed at a height level higher than a height level of each of the first and second lower bonding pads and lower than a height level of the first upper bonding pads. The semiconductor device further comprises a second semiconductor device module including second bonding pads and a transistor electrically connected to at least one of the second bonding pads; and a third semiconductor device module including third bonding pads. The third pads are spaced apart from the first and second lower bonding pads in a first direction. The first lower bonding pad contacts at least one of the second bonding pads. At least one of the third bonding pads contacts at least one of the first upper bonding pads. The first semiconductor device module includes a bonding pad connection plug directly electrically connecting the first lower bonding pad and at least one of the first upper bonding pads to each other.

公开(公告)号：US20220231117A1

公开(公告)日：2022-07-21

申请号：US17714259

申请日：2022-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Jin LIM ,  Ki Nam KIM ,  Hyung Suk JUNG ,  Kyoo Ho JUNG ,  Ki Hyun HWANG

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11507

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.