公开(公告)号：US20250098180A1

公开(公告)日：2025-03-20

申请号：US18829396

申请日：2024-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Nam KIM ,  Dae Won HA ,  Dong Guk CHO

IPC: H10B80/00 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: There is provided a semiconductor device manufactured using a method that reduces a manufacturing time and cost of the semiconductor device. The semiconductor device includes a first semiconductor device module including: a first lower bonding pad; a second lower bonding pad; first upper bonding pads; and a memory cell disposed at a height level higher than a height level of each of the first and second lower bonding pads and lower than a height level of the first upper bonding pads. The semiconductor device further comprises a second semiconductor device module including second bonding pads and a transistor electrically connected to at least one of the second bonding pads; and a third semiconductor device module including third bonding pads. The third pads are spaced apart from the first and second lower bonding pads in a first direction. The first lower bonding pad contacts at least one of the second bonding pads. At least one of the third bonding pads contacts at least one of the first upper bonding pads. The first semiconductor device module includes a bonding pad connection plug directly electrically connecting the first lower bonding pad and at least one of the first upper bonding pads to each other.