公开(公告)号：US09672611B2

公开(公告)日：2017-06-06

申请号：US14693914

申请日：2015-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Yang ,  Kaiyuan Chi ,  Seunghune Yang ,  Sibo Cai

IPC: G06K9/00 ,  G06T7/00 ,  H01L21/66 ,  G01N23/20 ,  H01J37/22 ,  H01J37/28

CPC classification number: G06T7/001 ,  G01N23/20 ,  G01N23/2251 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2816 ,  H01J2237/2817 ,  H01L22/12

Abstract: A pattern analysis method of a semiconductor device includes extracting a contour image of material layer patterns formed on a wafer, calculating an individual density value (DV) representing an area difference between the contour image and a target layout image, scoring the material layer patterns on the wafer using the individual DV, identifying a failure pattern among the scored material layer patterns, calculating coordinates of the identified failure pattern and displaying the coordinates on a critical dimension-scanning electron microscopy (CD-SEM) image, inputting a reference DV in the computer and automatically sorting the material layer patterns into material layer patterns having a hotspot and material layer patterns not having a hotspot, and reviewing the sorted material layer patterns having the hotspot.

公开(公告)号：US09965851B2

公开(公告)日：2018-05-08

申请号：US15051814

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaiyuan Chi ,  Kiho Yang ,  Seunghune Yang

IPC: G06K9/00 ,  G06T7/00 ,  G06K9/46 ,  G06T7/11 ,  G06T7/12 ,  G06T7/155 ,  G06K9/68 ,  H01L21/66

CPC classification number: G06T7/001 ,  G06K9/4604 ,  G06K9/685 ,  G06K2209/19 ,  G06T7/11 ,  G06T7/12 ,  G06T7/155 ,  G06T2207/10061 ,  G06T2207/30148 ,  G06T2207/30172 ,  H01L22/12

Abstract: The inventive concepts provide a method for inspecting a pattern, a method for manufacturing a semiconductor device, and an apparatus used according to the methods. The method for inspecting a pattern includes detecting a measured image corresponding to a pattern formed on a substrate, detecting a first hot spot corresponding to a ghost image of the measured image, with the first hot spot representing a defect of the pattern, and detecting a second hot spot that has an area that is wider than that of the first hot spot.

公开(公告)号：US20160275663A1

公开(公告)日：2016-09-22

申请号：US15051814

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaiyuan Chi ,  Kiho Yang ,  Seunghune Yang

IPC: G06T7/00 ,  G06T7/60 ,  G06K9/52 ,  G06K9/46 ,  G06K9/62

CPC classification number: G06T7/001 ,  G06K9/4604 ,  G06K9/685 ,  G06K2209/19 ,  G06T7/11 ,  G06T7/12 ,  G06T7/155 ,  G06T2207/10061 ,  G06T2207/30148 ,  G06T2207/30172 ,  H01L22/12

Abstract: The inventive concepts provide a method for inspecting a pattern, a method for manufacturing a semiconductor device, and an apparatus used according to the methods. The method for inspecting a pattern includes detecting a measured image corresponding to a pattern formed on a substrate, detecting a first hot spot corresponding to a ghost image of the measured image, with the first hot spot representing a defect of the pattern, and detecting a second hot spot that has an area that is wider than that of the first hot spot.

Abstract translation: 本发明构思提供了用于检查图案的方法，用于制造半导体器件的方法以及根据该方法使用的装置。 检查图案的方法包括检测与形成在基板上的图案相对应的测量图像，检测与测量图像的重影图像相对应的第一热点，第一热点表示图案的缺陷，并且检测 第二个热点的面积比第一个热点高。