公开(公告)号：US09947668B2

公开(公告)日：2018-04-17

申请号：US14591165

申请日：2015-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin Lee ,  Sungho Jang ,  Jiyoung Kim ,  Kang-Uk Kim ,  Chan Min Lee ,  Juyeon Jang

IPC: H01L27/108 ,  H01L21/3213

CPC classification number: H01L27/10885 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/10897

Abstract: Semiconductor devices, and methods for forming the same, include forming a first wiring film and an etching buffer film in a cell array region and a peripheral circuit region of a substrate, and forming a contact hole by selectively etching the etching buffer film and the first wiring film so as to expose an active region of the cell array region and at least a part of a field isolation region adjacent thereto. A bit line contact is formed in the contact hole to be in contact with the active region, and a second wiring film is formed over the substrate. By patterning the second wiring film, the bit line contact, the etching buffer film, and the first wiring film, a bit line is formed in the cell array region and a peripheral gate is formed in the peripheral circuit region.