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    BACKSIDE ILLUMINATED ACTIVE PIXEL SENSOR ARRAY, METHOD OF MANUFACTURING THE SAME, AND BACKSIDE ILLUMINATED IMAGE SENSOR INCLUDING THE SAME
    2.
    发明申请
    BACKSIDE ILLUMINATED ACTIVE PIXEL SENSOR ARRAY, METHOD OF MANUFACTURING THE SAME, AND BACKSIDE ILLUMINATED IMAGE SENSOR INCLUDING THE SAME 有权
    背面照明的有源像素传感器阵列，其制造方法和包括其的背面照明的图像传感器

    公开(公告)号：US20130344639A1

    公开(公告)日：2013-12-26

    申请号：US13950954

    申请日：2013-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

    IPC: H01L27/146

    CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

    Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

    Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

    Method of manufacturing backside illuminated active pixel sensor array
    3.
    发明授权
    Method of manufacturing backside illuminated active pixel sensor array 有权
    制造背面照明有源像素传感器阵列的方法

    公开(公告)号：US08945973B2

    公开(公告)日：2015-02-03

    申请号：US13950954

    申请日：2013-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

    IPC: H01L21/00 ,  H01L27/146

    CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

    Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

    Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

    Image Sensors and Imaging Devices Including the Same
    4.
    发明申请
    Image Sensors and Imaging Devices Including the Same 有权
    图像传感器和成像设备包括它

    公开(公告)号：US20140354863A1

    公开(公告)日：2014-12-04

    申请号：US14160028

    申请日：2014-01-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-chak Ahn ,  Dong-young Jang

    IPC: H01L27/146

    CPC classification number: H01L27/14625 ,  H01L27/14607 ,  H01L27/1462

    Abstract: An image sensor includes a first photo detecting device disposed in a central region of a pixel array portion and a second photo detecting device disposed in an edge of the pixel array portion. The second photo detecting device has a full well capacity which is less than a full well capacity of the first photo detecting device. An imaging device includes the image sensor and an image signal process. The image signal processor compensates for a lens shading effect and a difference between the full well capacity of the first photo detecting device and the full well capacity of the second photo detecting device.

    Abstract translation: 图像传感器包括设置在像素阵列部分的中心区域中的第一光检测装置和设置在像素阵列部分的边缘中的第二光检测装置。 第二光检测装置的全井容量小于第一光检测装置的全井容量。 成像装置包括图像传感器和图像信号处理。 图像信号处理器补偿透镜阴影效应和第一光检测装置的全阱容量与第二光检测装置的全阱容量之间的差异。

    Imaging sensors including photodetecting devices with different well capacities and imaging devices including the same
    6.
    发明授权
    Imaging sensors including photodetecting devices with different well capacities and imaging devices including the same 有权
    成像传感器包括具有不同孔容的光检测装置和包括其的成像装置

    公开(公告)号：US09324754B2

    公开(公告)日：2016-04-26

    申请号：US14160028

    申请日：2014-01-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-chak Ahn ,  Dong-young Jang

    IPC: H04N5/335 ,  H01L27/146

    CPC classification number: H01L27/14625 ,  H01L27/14607 ,  H01L27/1462

    Abstract: An image sensor includes a first photo detecting device disposed in a central region of a pixel array portion and a second photo detecting device disposed in an edge of the pixel array portion. The second photo detecting device has a full well capacity which is less than a full well capacity of the first photo detecting device. An imaging device includes the image sensor and an image signal process. The image signal processor compensates for a lens shading effect and a difference between the full well capacity of the first photo detecting device and the full well capacity of the second photo detecting device.

    Abstract translation: 图像传感器包括设置在像素阵列部分的中心区域中的第一光检测装置和设置在像素阵列部分的边缘中的第二光检测装置。 第二光检测装置的全井容量小于第一光检测装置的全井容量。 成像装置包括图像传感器和图像信号处理。 图像信号处理器补偿透镜阴影效应和第一光检测装置的全阱容量与第二光检测装置的全阱容量之间的差异。

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