公开(公告)号：US10070085B2

公开(公告)日：2018-09-04

申请号：US15343311

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Seung-sik Kim ,  Kang-sun Lee ,  Moo-sup Lim

IPC: H04N5/374 ,  H04N5/369 ,  H04N9/04 ,  H01L27/146 ,  H04N5/225 ,  H04N9/077

Abstract: Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.

公开(公告)号：US08945973B2

公开(公告)日：2015-02-03

申请号：US13950954

申请日：2013-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

公开(公告)号：US09521341B2

公开(公告)日：2016-12-13

申请号：US14574463

申请日：2014-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Seung-sik Kim ,  Kang-sun Lee ,  Moo-sup Lim

IPC: H04N5/369 ,  H04N9/04 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/2254 ,  H04N5/3696 ,  H04N9/045 ,  H04N9/077

Abstract: Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.

Abstract translation: 提供了包括图像传感器的图像传感器和图像捕获装置。 图像传感器包括：像素阵列，包括：多个感测像素，分别输出对应于入射光强度的图像信号; 以及彼此相邻的至少一对聚焦像素，并且各自输出入射光的相位差作为聚焦信号; 其中每个聚焦像素包括：半导体层，包括累积根据入射光中吸收的光产生的电荷的光电检测装置; 布线层，其形成在所述半导体层的第一表面上并且包括布线; 平坦化层，其具有在所述半导体层的第二表面上的第一表面; 形成在所述平坦化层中的屏蔽层，以阻挡入射到所述光电检测器件的入射光的一部分; 以及滤色器层和微透镜层。

公开(公告)号：US08952475B2

公开(公告)日：2015-02-10

申请号：US13790107

申请日：2013-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-seok Oh ,  Eun-sub Shim ,  Jung-chak Ahn ,  Moo-sup Lim ,  Sung-ho Choi

IPC: H01L31/062 ,  H01L31/00 ,  H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L31/0352

Abstract: A pixel and pixel array for use in an image sensor are provided. The image sensor includes floating sensing nodes symmetrically arranged with respect to a photodiode in each pixel.

Abstract translation: 提供了用于图像传感器的像素和像素阵列。 图像传感器包括相对于每个像素中的光电二极管对称布置的浮动感测节点。

公开(公告)号：US20130344639A1

公开(公告)日：2013-12-26

申请号：US13950954

申请日：2013-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC: H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。