Abstract:
A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.
Abstract:
A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.
Abstract:
Disclosed herein are glass bubbles that are surface treated to obtain a metallic texture, and have a similar specific gravity to that of plastic. Thus, there is a low possibility of occurrence of appearance defects even when a material obtained by compounding the glass bubbles and the plastic is injection molded and a master batch including the glass bubbles and plastic to improve a miscibility of the glass bubbles and the plastic. The glass bubbles each include a spherical shell and a surface treatment layer formed on a surface of the shell, the spherical shell having a hollow hole so as to decrease a specific gravity of the glass bubbles and the surface treatment layer being formed by surface treatment to obtain a metallic texture.
Abstract:
A gas injection apparatus injecting process gases toward a substrate includes a base part, a first gas injection part on the base part, the first gas injection part to inject a first gas including a reaction-inhibiting functional group, a second gas injection part spaced apart from the first gas injection part in one direction on the base part, the second gas injection part to inject a second gas including a precursor of a specific material, and a third gas injection part spaced apart from the second gas injection part in the one direction on the base part, the third gas injection part to inject a third gas reacting with the precursor of the specific material.