公开(公告)号：US20200051998A1

公开(公告)日：2020-02-13

申请号：US16657520

申请日：2019-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Hwan LEE ,  Jee Yong KIM ,  Seok Jung YUN ,  Ji Hyeon LEE

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11575

Abstract: A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.