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公开(公告)号:US10608615B2
公开(公告)日:2020-03-31
申请号:US15417339
申请日:2017-01-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jong Woo Kim , Ju Hyun Kang , Min Su Kim , Ka Ram Lee
IPC: H03K3/012 , H03K3/3562
Abstract: A semiconductor device may include a master latch that stores an input data signal, using a local power supply voltage and a clock signal, and outputs the input data signal to a first output signal; a slave latch that stores the first output signal, using a global power supply voltage, the clock signal and a retention signal, and outputs a second output signal; a first logic gate that receives input of one signal and another signal of the retention signal, the clock signal and the reset signal, and outputs a first control signal generated by performing a first logical operation; and a second logic gate that receives input of the rest of the retention signal, the clock signal and the reset signal, and the first control signal, and performs a second logical operation to at least one of the master latch and the slave latch.