公开(公告)号：US12272606B2

公开(公告)日：2025-04-08

申请号：US18300983

申请日：2023-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Yoo ,  Juyoun Kim ,  Hyungjoo Na ,  Bongseok Suh ,  Jooho Jung ,  Euichul Hwang ,  Sungmoon Lee

IPC: H01L21/8238 ,  H01L21/762 ,  H01L27/118

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US11062961B2

公开(公告)日：2021-07-13

申请号：US16408912

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Yoo ,  Juyoun Kim ,  Hyungjoo Na ,  Bongseok Suh ,  Jooho Jung ,  Euichul Hwang ,  Sungmoon Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/06 ,  H01L29/66 ,  H01L21/311 ,  H01L21/8238 ,  H01L27/118 ,  H01L21/762

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US20220310594A1

公开(公告)日：2022-09-29

申请号：US17569363

申请日：2022-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youncheol Jeong ,  Jaeung Koo ,  Kwansung Kim ,  Seungyoon Kim ,  Boun Yoon ,  Jooho Jung ,  Sukbae Joo

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, a plurality of channel layers vertically spaced apart from each other on the active region, a gate structure vertically overlapping the active region and the plurality of channel layers on the substrate, extending in a second direction, and including a gate electrode surrounding the plurality of channel layers and a gate capping layer disposed on an upper surface of the gate electrode, a first source/drain region disposed on a side of the gate structure on the active region and in contact with the plurality of channel layers, an isolation structure intersecting the active region on the substrate, extending in the second direction, and disposed between the first source/drain region and a second source/drain region adjacent to each other, and contact structures in contact with the source/drain regions.

公开(公告)号：US11658075B2

公开(公告)日：2023-05-23

申请号：US17246778

申请日：2021-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Yoo ,  Juyoun Kim ,  Hyungjoo Na ,  Bongseok Suh ,  Jooho Jung ,  Euichul Hwang ,  Sungmoon Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/06 ,  H01L21/311 ,  H01L21/8238 ,  H01L27/118 ,  H01L21/762

CPC classification number: H01L21/823878 ,  H01L21/76224 ,  H01L27/11807 ,  H01L2027/11816 ,  H01L2027/11829 ,  H01L2027/11861

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US20230139314A1

公开(公告)日：2023-05-04

申请号：US17814876

申请日：2022-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhyun Song ,  Ohseong Kwon ,  Junggil Yang ,  Jooho Jung

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H01L29/423 ,  H01L27/088

Abstract: A semiconductor device includes: a substrate including an active region extending in a first direction; a gate electrode extending in a second direction and intersecting the active region, the gate electrode including first electrode layer(s) and a second electrode layer;, channel layers spaced apart from each other in a third direction and at least partially surrounded by the gate electrode; source/drain regions, with at least one source/drain region on each side of the gate electrode and electrically connected to the channel layers; and air gap regions in the second electrode layer between the channel layers and between a lowermost channel layer and the active region in the third direction. The first electrode layer(s) or the second electrode layer has a first thickness between adjacent ones of the channel layers in the third direction, and has a second thickness greater than the first thickness on side surfaces of the channel layers.