公开(公告)号：US11215919B2

公开(公告)日：2022-01-04

申请号：US16848906

申请日：2020-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghun Kim ,  Joobyoung Kim

IPC: G03F1/36 ,  G03F7/20 ,  G06F30/398 ,  G06F119/18

Abstract: A method of manufacturing a lithographic mask includes performing optical proximity correction (OPC) for correcting an optical proximity effect (OPE) on a design layout, and forming a lithographic mask based on the design layout corrected by performing the OPC, wherein performing the OPC includes generating a plurality of segments. and adjusting a bias of the plurality of segments, and the plurality of dissection positions include global uniform dissection positions defined for each third length based on a global coordinate system that is a coordinate system of the whole design layout.

公开(公告)号：US11740550B2

公开(公告)日：2023-08-29

申请号：US17534506

申请日：2021-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghun Kim ,  Joobyoung Kim

IPC: G06F30/30 ,  G03F1/36 ,  G03F7/00 ,  G06F30/398 ,  G06F119/18

CPC classification number: G03F1/36 ,  G03F7/70441 ,  G06F30/398 ,  G06F2119/18

Abstract: A method of manufacturing a lithographic mask includes performing optical proximity correction (OPC) for correcting an optical proximity effect (OPE) on a design layout, and forming a lithographic mask based on the design layout corrected by performing the OPC, wherein performing the OPC includes generating a plurality of segments. and adjusting a bias of the plurality of segments, and the plurality of dissection positions include global uniform dissection positions defined for each third length based on a global coordinate system that is a coordinate system of the whole design layout.

公开(公告)号：US20240280891A1

公开(公告)日：2024-08-22

申请号：US18111785

申请日：2023-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heejun Lee ,  Wooyong Cho ,  Bayram Yenikaya ,  Joobyoung Kim ,  Useong Kim

IPC: G03F1/36 ,  G03F1/84

CPC classification number: G03F1/36 ,  G03F1/84

Abstract: Provided are an optical proximity correction (OPC) method capable of addressing the limitations of patterning and improving the reliability of patterning, and a mask manufacturing method using the OPC method. In the OPC method, a rectangular mask layout for a target pattern is created, the edge of the rectangular mask layout is dissected into segments, a first shape variable point is created, and a second shape variable point is created by shifting the first shape variable point on a rounded target pattern. Thereafter, a curvilinear mask layout is created based on the second shape variable point, a contour is extracted based on the curvilinear mask layout, an edge placement error (EPE) is determined, and the operations are repeated according to a predetermined criterion, thereby realizing a mask layout with minimal EPEs.

公开(公告)号：US11150551B2

公开(公告)日：2021-10-19

申请号：US16855083

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heungsuk Oh ,  Joobyoung Kim ,  Sanghun Kim ,  Guk Hyun Kim

IPC: G06F30/392 ,  G03F1/36

Abstract: A computer-readable medium includes a program code that, when executed by a processing circuitry, causes the processing circuitry to divide a layout of a semiconductor chip into a plurality of patches, generate a plurality of segments from a layout of each of the plurality of patches, wherein a first patch of the plurality of patches includes first segments and a second patch of the plurality of patches includes second segments, calculate hash values respectively corresponding to the first segments and the second segments by using a hash function, calculate bias values of segments having a first hash value from among the first segments, calculate a representative value based on the bias values, and apply the representative value to the segments having the first hash value from among the first segments.