公开(公告)号：US20240176227A1

公开(公告)日：2024-05-30

申请号：US18330729

申请日：2023-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HEUNGSUK OH ,  Joobyoung KIM ,  SANGWOOK KIM ,  HEE-JUN LEE ,  JEEEUN JUNG ,  KYU-BIN HAN

IPC: G03F1/36 ,  H01L21/32

CPC classification number: G03F1/36 ,  H01L21/32

Abstract: A photomask fabrication method comprising performing an optical proximity correction (OPC) on a design pattern to generate a correction pattern, and manufacturing the photomask having the correction pattern. The step of performing the OPC includes dividing the design pattern into a plurality of segments, producing a hash value for each of the plurality of segments, and generating the correction pattern by applying a first correction bias to ones of the plurality of segments having a same hash value, wherein at least two of the plurality of segments have the same hash value. The step of producing the hash value includes generating a key segment in a target segment, creating a query region around the key segment, and producing the hash value for the target segment based on a pattern image in the query region.

公开(公告)号：US20210072636A1

公开(公告)日：2021-03-11

申请号：US16848906

申请日：2020-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghun KIM ,  Joobyoung KIM

IPC: G03F1/36 ,  G03F1/00 ,  G03F7/20

Abstract: A method of manufacturing a lithographic mask includes performing optical proximity correction (OPC) for correcting an optical proximity effect (OPE) on a design layout, and forming a lithographic mask based on the design layout corrected by performing the OPC, wherein performing the OPC includes generating a plurality of segments. and adjusting a bias of the plurality of segments, and the plurality of dissection positions include global uniform dissection positions defined for each third length based on a global coordinate system that is a coordinate system of the whole design layout.

公开(公告)号：US20220082930A1

公开(公告)日：2022-03-17

申请号：US17534506

申请日：2021-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghun KIM ,  Joobyoung KIM

IPC: G03F1/36 ,  G03F7/20 ,  G06F30/398

Abstract: A method of manufacturing a lithographic mask includes performing optical proximity correction (OPC) for correcting an optical proximity effect (OPE) on a design layout, and forming a lithographic mask based on the design layout corrected by performing the OPC, wherein performing the OPC includes generating a plurality of segments. and adjusting a bias of the plurality of segments, and the plurality of dissection positions include global uniform dissection positions defined for each third length based on a global coordinate system that is a coordinate system of the whole design layout.

公开(公告)号：US20210109437A1

公开(公告)日：2021-04-15

申请号：US16855083

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heungsuk OH ,  Joobyoung KIM ,  Sanghun KIM ,  Guk Hyun KIM

IPC: G03F1/36 ,  G06F30/392

Abstract: A computer-readable medium includes a program code that, when executed by a processing circuitry, causes the processing circuitry to divide a layout of a semiconductor chip into a plurality of patches, generate a plurality of segments from a layout of each of the plurality of patches, wherein a first patch of the plurality of patches includes first segments and a second patch of the plurality of patches includes second segments, calculate hash values respectively corresponding to the first segments and the second segments by using a hash function, calculate bias values of segments having a first hash value from among the first segments, calculate a representative value based on the bias values, and apply the representative value to the segments having the first hash value from among the first segments.